Metal-Containing Resist Middle Layer for Fine Pattern Adhesion
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Solution Overview
Problem
Conventional semiconductor photoresist compositions face challenges in achieving high resolution and etching resistance while maintaining pattern integrity, particularly due to issues with adhesion and pattern collapse in fine patterning processes, especially when using metal hard mask films.
Innovation Solution
A compound comprising Ti, Zr, or Hf with specific ligands derived from organic sulfonic acid compounds is used to form a metal-containing film, enhancing adhesion to resist upper layers and improving pattern shape and stability.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Measurement precision
If a photoresist film is thinned to improve resolution for fine patterning, then resolution performance is improved, but etching resistance is reduced and pattern collapse occurs
Solution Approach 1:
The invention divides the single photoresist film into two separate layers: an upper photoresist layer for pattern formation and a lower hard mask layer for etching resistance. This segmentation allows each layer to be optimized independently - the upper layer can be thin for high resolution while the lower layer provides robust etching protection
Solution Approach 2:
The invention transitions from a one-dimensional solution (thinning a single photoresist film) to a two-dimensional layered structure. By adding the vertical dimension with a separate hard mask layer, the system achieves both high resolution (through thin upper layer) and high etching resistance (through thick lower layer) simultaneously
2Measurement precision
If a photoresist composition uses resins with low light absorption (such as novolak resin) to improve resolution at shorter wavelengths, then resolution is improved, but etching rate increases and etching resistance decreases
Solution Approach 1:
The invention separates the functions of light absorption control and etching resistance control into different layers. The upper photoresist layer uses resins optimized for light absorption characteristics at exposure wavelengths, while the lower hard mask layer uses materials optimized for etching resistance, resolving the contradiction between resolution and etching resistance
Solution Approach 2:
Different regions of the resist structure have different material properties tailored to their specific functions. The upper layer has material properties optimized for photolithography (low light absorption), while the lower layer has material properties optimized for dry etching resistance, allowing each region to perform its function optimally without compromising the other
3Strength
If a metal hard mask film is used to improve etching resistance, then etching resistance is improved, but adhesion to resist upper layer deteriorates and pattern collapse occurs
Solution Approach 1:
The invention introduces an adhesion promoter layer or surface treatment between the metal hard mask film and the upper photoresist layer. This intermediary layer mediates the interface, providing strong adhesion to both the metal layer below and the organic photoresist above, preventing pattern collapse while maintaining the high etching resistance of the metal layer
Solution Approach 2:
The lower layer uses composite material structure combining metal particles or oxide layers with organic binder materials. This composite structure provides both the high etching resistance of metal components and improved adhesion properties through the organic matrix, resolving the contradiction between etching resistance and adhesion
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The compound improves adhesion and dry etching resistance, preventing pattern collapse and enabling accurate pattern transfer to substrates, even under high NA exposure conditions.
Implementation Method 1
The compound improves adhesion and dry etching resistance, preventing pattern collapse
Implementation Method 2
The compound improves adhesion and dry etching resistance, enabling accurate pattern transfer to substrates
Data Source
AI summary
An object of the present invention is to provide: a compound for forming a metal-containing film providing a resist middle layer film by which a good pattern shape can be obtained, and that has a high adhesion to a resist upper layer film and suppresses the collapse of a fine pattern in a fine patterning process during a semiconductor device manufacturing process; a composition for forming a metal-containing film using the compound; and a patterning process using the composition.This provides:a compound (A) for forming a metal-containing film, whereinthe compound (A) for forming a metal-containing film is a compound comprising at least one kind of metal atom selected from the group consisting of Ti, Zr, and Hf and a ligand coordinated to the metal atom, andat least one of the ligands is derived from the organic sulfonic acid compound represented by the following formula (s):