Metal Resist Treatment Liquid for Pattern Resolution and Defect Control
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Solution Overview
Problem
Conventional developer compositions for semiconductor lithography fail to simultaneously suppress pattern defects and achieve high pattern resolution, necessitating an improvement in developer and rinsing liquids for metal resist films.
Innovation Solution
A treatment liquid comprising propylene glycol monomethyl ether acetate, propylene glycol monomethyl ether, and acetic acid, with specific mass ratios and optional additives like water, boron atoms, and lead atoms, formulated to enhance pattern resolution and defect suppression.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional developer compositions are used, then the development process can be performed, but pattern defects occur and pattern resolution is insufficient
Solution Approach 1:
The patent applies parameter changes by precisely controlling the composition ratios of solvents (propylene glycol monomethyl ether acetate, propylene glycol monomethyl ether, acetic acid) and additives (water, boron compounds, lead compounds) in the developer and rinsing liquids. By optimizing these chemical parameters within specific ranges, the treatment liquid achieves both high pattern resolution and effective suppression of pattern defects, resolving the contradiction between manufacturing precision and harmful factors.
Solution Approach 2:
The patent employs composite materials by formulating a multi-component treatment liquid system that combines multiple solvents and additives work together. The developer contains propylene glycol monomethyl ether acetate (50-90 wt%), propylene glycol monomethyl ether (0.001-10 wt%), and acetic acid (0.01-10 wt%), along with optional water, boron compounds, and lead compounds. Similarly, the rinsing liquid uses a comparable composite formulation. This composite approach enables simultaneous achievement of high pattern resolution and defect suppression that single-component systems cannot achieve.
2Manufacturing precision
If the treatment liquid composition is optimized for high pattern resolution, then manufacturing precision improves, but the formulation complexity increases
Solution Approach 1:
The patent manages formulation complexity by establishing specific concentration ranges for each component rather than requiring precise fixed ratios. The developer specifies propylene glycol monomethyl ether acetate at 50-90 wt%, propylene glycol monomethyl ether at 0.001-10 wt%, and acetic acid at 0.01-10 wt%, with optional additives at controlled levels. This parameter-based specification simplifies manufacturing while maintaining high pattern resolution, avoiding the need for complex multi-step formulation processes.
Data Source
AI summary
It is an object of the invention to provide a treatment liquid that, when used as a developer or a rinsing liquid for a metal resist film, exhibits a high ability to suppress the occurrence of pattern defects and also exhibits a high pattern resolution. The treatment liquid of the invention is a treatment liquid containing propylene glycol monomethyl ether acetate, propylene glycol monomethyl ether, and acetic acid. The content of propylene glycol monomethyl ether acetate is 60% by mass or more based on the total mass of the treatment liquid, and the content of propylene glycol monomethyl ether is 0.00010 to 0.1% by mass based on the total mass of the treatment liquid. The content of acetic acid is 1.0% by mass or more and less than 40.0% by mass based on the total mass of the treatment liquid.