Metal-Containing Resist Films for Better Pattern Shape and LWR
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Solution Overview
Problem
Resist patterns formed using metal-containing compounds can suffer from collapse or trailing issues, necessitating an improvement in sensitivity and line width roughness (LWR) performance for semiconductor substrates.
Innovation Solution
A production method involving vapor deposition of metal compounds or metals like Au, Cr, Ag, or In onto a substrate to form a metal-containing resist film, followed by exposure to light, which enhances pattern formation and LWR performance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Use of energy by moving object
If a metal-containing compound is used to form a resist pattern, then sensitivity can be improved, but pattern collapse or trailing occurs at the bottom of the resist film
Solution Approach 1:
The invention changes the chemical composition parameters of the metal-containing compound by specifying particular metals (Au, Cr, Ag, In) and their compounds, which modifies the resist film's properties to achieve both high sensitivity and good pattern shape without collapse or trailing
Solution Approach 2:
The invention uses composite material systems combining specific metals (Au, Cr, Ag, In) with resist components, creating a composite resist film that exhibits both improved sensitivity and maintained pattern integrity, resolving the contradiction between sensitivity enhancement and pattern shape preservation
2Manufacturing precision
If conventional resist materials are used, then pattern formation is achieved, but LWR performance is insufficient for advanced microfabrication
Solution Approach 1:
The invention changes the material composition parameters by incorporating specific metals (Au, Cr, Ag, In) into the resist system, which improves LWR performance and enables better control for advanced microfabrication processes
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This method efficiently produces semiconductor substrates with improved pattern shape and LWR, suitable for future microfabrication of semiconductor devices.
Implementation Method 1
a step of vapor depositing a metal compound or metal directly or indirectly onto a substrate to form a metal-containing resist film
Implementation Method 2
a resist film formed from a radiation-sensitive composition for forming a resist film is exposed to an electromagnetic wave such as an ultraviolet ray, a far ultraviolet ray (e.g., an ArF excimer laser beam or a KrF excimer laser beam) or an extreme ultraviolet ray (EUV), or a charged corpuscular ray such as an electron beam to generate an acid in an exposed area
Data Source
AI summary
A production method for a semiconductor substrate includes: performing a vapor deposition of a metal compound or metal directly or indirectly onto a substrate to form a metal-containing resist film; and exposing the metal-containing resist film to light. The metal compound or metal includes an Au atom, a Cr atom, an Ag atom, an In atom, or a combination thereof. The method preferably further includes developing the metal-containing resist film after exposing. The vapor deposition is preferably performed by PVD or CVD. The metal compound preferably includes a metal complex, a metal halide, or an organometal.