Metal-Containing Resist Stack for Stable Rectangular Lithography
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Solution Overview
Problem
Current methods for forming patterns in semiconductor substrates using radiation-sensitive compositions face challenges in achieving superior resist pattern rectangularity, leading to potential issues like pattern collapse or trailing, which affect the quality and miniaturization of semiconductor devices.
Innovation Solution
A method involving the application of a composition for forming a resist underlayer film, which includes a metal-containing resist film exposed to radiation, followed by development with a solvent to create a resist pattern, utilizing components such as acid generators, acid group-containing components, photo-base generators, and solvents to enhance pattern rectangularity.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional radiation-sensitive compositions are used for pattern formation, then the basic lithography process can be performed, but pattern rectangularity deteriorates leading to pattern collapse or trailing
Solution Approach 1:
The resist system is segmented into multiple functional layers: a metal-containing resist film layer and a resist underlayer film layer. The metal-containing resist film provides the primary pattern formation function, while the resist underlayer film provides mechanical support and enhances adhesion, preventing pattern collapse and improving rectangularity without interfering with the primary lithography process
Solution Approach 2:
The invention uses a composite resist system combining a metal-containing resist film (with metal atoms such as Al, Si, Ti, V, Cr, Mn, Fe, Co, Ni, Cu, Zn, Ga, Ge, As, Se, or Ag) and a resist underlayer film. This composite structure leverages the unique properties of metal-containing resists for pattern definition while the underlayer provides structural integrity, resolving the contradiction between pattern rectangularity and stability
2Productivity
If miniaturization of processing technology is pursued, then device density increases, but pattern quality deteriorates due to pattern collapse or trailing
Solution Approach 1:
By dividing the resist system into metal-containing resist film and underlayer film, the invention enables miniaturization while maintaining pattern quality. The underlayer film provides mechanical support that prevents pattern collapse at smaller dimensions, allowing higher device density without sacrificing pattern quality
Solution Approach 2:
The invention changes the compositional parameters of the resist system by incorporating metal atoms in the resist film and using specific underlayer materials (polyhydroxystyrene, polyhydroxyphenyl, polyhydroxynaphthyl compounds, or silane-based compounds). This parameter change enables the resist system to maintain pattern fidelity during miniaturization processes
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enables the efficient manufacture of semiconductor substrates with good pattern shapes, suitable for further miniaturization, by forming resist underlayer films with superior rectangularity, thus improving the quality and precision of semiconductor devices.
Implementation Method 1
a resist film formed from a radiation-sensitive composition for forming a resist film is exposed to an electromagnetic wave such as an ultraviolet ray, a far ultraviolet ray (e.g., an ArF excimer laser beam or a KrF excimer laser beam) or an extreme ultraviolet ray (EUV), or a charged corpuscular ray such as an electron beam to generate an acid in an exposed portion
Implementation Method 2
a chemical reaction using this acid as a catalyst causes a difference in dissolution rate with respect to the developer between the exposed portion and the unexposed portion, and a pattern is thereby formed on a substrate
Data Source
AI summary
A method for manufacturing a semiconductor substrate includes forming a resist underlayer film directly or indirectly on a substrate by applying a composition for forming a resist underlayer film. A metal-containing resist film is formed on the resist underlayer film. The metal-containing resist film is exposed. An exposed portion of the exposed metal-containing resist film is dissolved with a developer to form a resist pattern.