Metal-Containing Resist Stack for Rectangular Semiconductor Patterns
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Solution Overview
Problem
Current methods for forming patterns in semiconductor substrates using radiation-sensitive compositions face challenges such as pattern collapse and trailing, which affect the rectangularity and quality of the resist patterns, especially as semiconductor technology advances towards further miniaturization.
Innovation Solution
A method involving the application of a composition for forming a resist underlayer film, which includes a metal-containing resist film exposed and then partially volatilized to create a resist pattern, utilizing components like acid generators, acid group-containing components, photo-base generators, and solvents to enhance pattern rectangularity and quality.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If a radiation-sensitive composition is used to form a resist pattern through exposure and development, then a pattern can be formed on the substrate, but pattern collapse and trailing occur affecting rectangularity and quality
Solution Approach 1:
The resist structure is divided into multiple layers: a lower resist film and an upper metal-containing resist film. This segmentation allows each layer to perform different functions - the lower layer provides structural support while the upper layer enables high-resolution patterning, thereby preventing pattern collapse and improving rectangularity
Solution Approach 2:
The invention uses a composite resist system combining organic polymer-based lower resist film with metal-containing upper resist film. This composite structure leverages the advantages of both materials - the organic polymer provides film formation and adhesion, while the metal-containing compound enables precise pattern definition through exposure-induced volatilization, resulting in superior pattern quality and rectangularity
2Length of moving object
If miniaturization of processing technology is pursued, then device size is reduced, but pattern collapse and trailing become more severe
Solution Approach 1:
By dividing the resist into lower and upper films with distinct functions, the system can achieve finer pattern definition in the upper layer while the lower layer maintains structural integrity even at reduced device dimensions, enabling miniaturization without sacrificing pattern quality
Solution Approach 2:
The invention changes the material parameters of the resist system by introducing metal-containing compounds with specific molecular weights and volatility characteristics. These parameter changes enable the upper resist film to maintain stable patterns at smaller scales through controlled exposure-induced volatilization, overcoming the pattern collapse issues that arise with miniaturization
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enables the efficient manufacturing of semiconductor substrates with improved pattern shape and rectangularity, suitable for future miniaturization of semiconductor devices by forming superior resist underlayer films.
Implementation Method 1
a resist film formed from a radiation-sensitive composition for forming a resist film is exposed to an electromagnetic wave such as an ultraviolet ray, a far ultraviolet ray (e.g., an ArF excimer laser beam or a KrF excimer laser beam) or an extreme ultraviolet ray (EUV), or a charged corpuscular ray such as an electron beam to generate an acid in an exposed portion
Implementation Method 2
A part of the exposed metal-containing resist film is volatilized to form a resist pattern
Data Source
AI summary
A method for manufacturing a semiconductor substrate includes forming a resist underlayer film directly or indirectly on a substrate by applying a composition for forming a resist underlayer film. A metal-containing resist film is formed on the resist underlayer film. The metal-containing resist film is exposed. A part of the exposed metal-containing resist film is volatilized to form a resist pattern.