On-Chip Metal Resistor Layout for Accurate Channel Temperature Sensing
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Solution Overview
Problem
Current methods for on-chip temperature measurement in 3D semiconductor devices are not accurate due to interference from active devices and lack of direct contact with channel regions, leading to unreliable temperature readings.
Innovation Solution
The use of a sense metal resistor or a double polysilicon gate arrangement in a cascode configuration to measure temperature by isolating the measurement element from active devices and ensuring direct contact with channel regions, allowing for accurate resistance-based temperature determination.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Measurement precision
If a diode or BJT junction is used for temperature monitoring, then temperature measurement is achieved, but measurement precision deteriorates due to interference from active devices
Solution Approach 1:
The patent extracts the temperature sensing function from the active devices themselves by using separate dedicated structures (diode junctions, BJT transistors, or resistance measurement circuits) that are physically isolated from the active devices. This separation removes the interference source while maintaining temperature monitoring capability.
Solution Approach 2:
The patent introduces intermediary temperature sensing structures that act as mediators between the active devices and the measurement system. These intermediaries (separate diodes, BJTs, or resistance circuits) indirectly measure the temperature of active devices without being part of their operational circuitry, thus avoiding interference.
2Measurement precision
If temperature monitoring is performed without direct contact with channel regions, then device operation is maintained, but measurement precision deteriorates
Solution Approach 1:
The patent segments the semiconductor structure into distinct functional regions: active devices for computation and separate temperature sensing structures for measurement. The sensing structures include dedicated diode junctions, BJT transistors, or resistance measurement circuits that are spatially separated from but thermally coupled to the active devices, allowing independent operation and accurate temperature measurement.
Solution Approach 2:
The patent introduces intermediary temperature sensing structures that act as mediators between the active devices and the measurement system. These intermediaries (separate diodes, BJTs, or resistance circuits) indirectly measure the temperature of active devices without being part of their operational circuitry, thus avoiding interference.
3Measurement precision
If measurement elements are isolated from active devices, then interference is minimized, but measurement precision deteriorates due to indirect contact
Solution Approach 1:
The patent applies local quality by creating temperature sensing structures with specific local properties optimized for thermal coupling. The diode junctions, BJT transistors, or resistance measurement circuits are positioned and configured to have high thermal conductivity and close thermal contact with the active devices, ensuring they accurately reflect the local temperature of the active devices while remaining electrically isolated.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach provides precise temperature measurement by minimizing interference and ensuring the measured resistance accurately reflects the channel region temperature, enhancing the accuracy of temperature monitoring in 3D semiconductor devices.
Implementation Method 1
the metal layer is configured to measure, due to a change of resistance in the metal layer, a temperature of the plurality of active area structures
Data Source
AI summary
A semiconductor device includes a plurality of active area structures. One or more active devices include portions of the plurality of active area structures. A metal layer is formed on the plurality of active area structures and separated from the one or more active devices by one or more dummy gate layers. The metal layer is configured to measure, due to a change of resistance in the metal layer, a temperature of the plurality of active area structures.