Metal–Silicon Junction Magnetic Sensor for 3D Field Measurement
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Solution Overview
Problem
Conventional Hall effect magnetic sensors struggle to accurately measure specific magnetic field components due to the interference of planar hall effect, necessitating the use of multiple devices and complicating data processing, which also hinders device miniaturization.
Innovation Solution
A magnetic sensor with a silicon substrate and a cross-shaped metal pattern, integrated with an X-shaped silicon pattern, allows for accurate measurement of three-dimensional magnetic field components using a single device, featuring a simple structure and high process compatibility with CMOS technology.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Measurement precision
If a conventional Hall effect magnetic sensor is used, then the device can detect magnetic fields, but it cannot accurately measure specific magnetic field components due to planar hall effect interference
Solution Approach 1:
The sensor is divided into four separate sensing elements arranged in a specific geometric pattern, with each element responsible for detecting specific magnetic field components. This segmentation allows accurate measurement of magnetic field components while eliminating planar hall effect interference through differential measurement techniques.
Solution Approach 2:
Each sensing element is designed with specific local characteristics including particular orientation angles and doping configurations. The local quality of each element is optimized to detect specific magnetic field components while being insensitive to others, enabling precise component measurement without requiring complex cancellation circuits.
2Measurement precision
If multiple devices are used to cancel planar hall effect, then measurement accuracy improves, but device size increases
Solution Approach 1:
Multiple sensing elements that would traditionally require separate devices are merged into a single integrated sensor structure. The four sensing elements are arranged in a compact geometric pattern on one substrate, achieving accurate magnetic field component measurement through integrated differential measurement while maintaining small sensor area.
Solution Approach 2:
The sensor transitions from planar two-dimensional arrangement to a three-dimensional structured layout with specific spatial orientations. By utilizing vertical stacking and angular arrangements in three dimensions, the sensor achieves accurate component measurement without increasing planar footprint, enabling miniaturization.
3Measurement precision
If multiple devices are used for planar hall effect cancellation, then measurement accuracy improves, but data processing complexity increases
Solution Approach 1:
The sensor structure is pre-configured with specific geometric arrangements and doping patterns that inherently eliminate planar hall effect interference during the measurement process. This preliminary design ensures that only the desired magnetic field components are detected, eliminating the need for complex post-processing cancellation algorithms.
Solution Approach 2:
The sensing elements are designed to automatically compensate for and eliminate planar hall effect interference through their inherent symmetric arrangement and differential measurement capability. The structure performs self-correction without requiring external processing, simplifying the overall system while maintaining high measurement accuracy.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Enables precise measurement of magnetic field components in three dimensions with a single device, facilitating miniaturization and reducing data processing complexity while maintaining high performance.
Implementation Method 1
In a conventional Hall effect magnetic sensor, not only the Hall effect due to a magnetic field component perpendicular to a device surface, but also a planar hall effect (PHE) due to a planar magnetic field component occur together
Implementation Method 2
The silicon pattern may be doped with P-type or N-type impurities
Implementation Method 3
The silicon pattern may be doped with P-type or N-type impurities
Data Source
AI summary
A magnetic sensor includes a silicon substrate, a cross-shaped metal pattern formed on the silicon substrate and directly contacting the silicon substrate, and an insulating layer covering the cross-shaped metal pattern.