Metal Silicon Nitride Layer Formation via Precursor Substitution
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Solution Overview
Problem
Current semiconductor device fabrication methods face challenges in reducing driving current and improving endurance and efficiency, particularly in phase-changeable memory devices where controlling thermal and electric factors is difficult.
Innovation Solution
A method involving the use of precursors with substituents that undergo transamination in a reaction chamber to form a metal silicon nitride layer, where a first precursor with a metal element and a second precursor with a silicon element react, allowing for controlled substitution of substituents with a substitute gas to form a conductive layer with adjustable resistivity, reducing unbound carbon content and enhancing layer characteristics.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If conventional methods are used to form conductive layers, then the fabrication process is simpler, but the driving current cannot be reduced and endurance is poor
Solution Approach 1:
The patent applies preliminary action by performing substituent substitution with substitute gas before the main deposition reaction occurs. The first precursor is introduced with substitute gas to replace carbon-containing substituents with nitrogen-containing groups, and this substitution is completed before the second precursor (silicon source) is introduced. This preliminary modification of the first precursor ensures that the resulting metal silicon nitride layer has reduced unbound carbon content and improved endurance, while maintaining a manageable fabrication process through sequential gas introduction.
Solution Approach 2:
The patent employs parameter changes by modifying the chemical composition parameters of the conductive layer through controlled substitution reactions. By adjusting the ratio of substitute gas to precursor, controlling reaction temperature, and varying the introduction timing of different precursors and gases, the method optimizes the nitrogen content and reduces unbound carbon in the metal silicon nitride layer. These parameter adjustments directly improve layer endurance and electrical characteristics without requiring fundamentally complex process equipment.
2Manufacturing precision
If oxidation processes are used to adjust resistivity, then resistivity control is achievable, but the process becomes more complex and efficiency decreases
Solution Approach 1:
The patent applies the taking out principle by removing the oxidation process step from the fabrication sequence. Instead of forming a conductive layer and then separately performing oxidation to adjust resistivity, the method directly forms metal silicon nitride with controlled resistivity through substituent substitution during deposition. The nitrogen-containing substituents and nitrogen atmosphere during deposition replace the need for post-deposition oxidation, extracting this step from the process flow and improving fabrication efficiency while maintaining precise resistivity control.
Solution Approach 2:
The patent merges the resistivity control function into the deposition process itself. By combining the substituent substitution reaction with the layer formation reaction, the method achieves both layer deposition and resistivity adjustment in a single integrated process step. The substitute gas (nitrogen-containing) serves dual purposes: it substitutes carbon-containing groups and simultaneously provides nitrogen for forming metal silicon nitride with desired electrical characteristics, eliminating the need for separate oxidation or resistivity adjustment steps.
3Ease of manufacture
If carbon-containing substituents are not substituted, then the precursor is simpler to handle, but unbound carbon content increases and layer characteristics deteriorate
Solution Approach 1:
The patent uses substitute gas (nitrogen-containing gas) as an intermediary substance to mediate between the carbon-containing precursor and the final nitride layer. The substitute gas acts as a intermediary that reacts with the first precursor to replace carbon-containing substituents with nitrogen-containing groups before the main deposition occurs. This intermediary substitution step prevents unbound carbon from being incorporated into the final layer, ensuring high compositional precision and layer quality while still allowing the use of organometallic precursors that are easier to handle and deposit than inorganic sources.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The method effectively reduces driving current, improves endurance, and adjusts resistivity of the semiconductor device's heating electrode, enabling more precise control over thermal and electric factors without the need for oxidation processes, thus enhancing the efficiency and performance of phase-changeable memory devices.
Implementation Method 1
at least one of the first substituent of the first precursor are substituted with the substitute gas, the first precursor substituted with the substitute gas may be adsorbed on the substrate
Implementation Method 2
the second precursor may be reacted with the adsorbed first precursor
Implementation Method 3
the first precursor substituted with the substitute gas may be adsorbed on the substrate
Data Source
AI summary
Provided are methods of forming a semiconductor device. The methods include providing a first precursor and a substitute gas into a reaction chamber having a substrate therein, the first precursor having a first substituent and further providing a second precursor into the reaction chamber. Either the first precursor or the second precursor includes a metal element and the other includes a silicon element, at least one of the first substituents of the first precursor are substituted with the substitute gas, the first precursor substituted with the substitute gas is adsorbed onto the substrate, and the second precursor is reacted with the adsorbed first precursor.