Metal Strap Interconnect for Die Core Power Delivery
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Solution Overview
Problem
Wire bonded semiconductor devices face challenges in efficiently providing power and ground to the core region of the die, leading to power starved regions and increased size due to routing constraints and IR drop, while existing modifications either fail to address these issues or introduce additional problems like reflow stresses and bond wire crowding.
Innovation Solution
The use of a low-profile metal strap or interconnect with gull wing structures attached to the die and packaging substrate via conductive adhesive, which reduces thermal impact and eliminates reflow stresses, allowing direct power supply to the die core and minimizing routing, thereby reducing IR drop and die size.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If wire bonding is used to connect bond pads to substrate, then electrical connections are established, but power delivery to die core is insufficient and die size increases
Solution Approach 1:
The patent introduces a new spatial dimension for power delivery by placing bond pads on the bottom surface of the die rather than only on the perimeter edges. This allows power to be delivered directly to the die core from the substrate through conductive adhesive, eliminating the need for long perimeter routing and reducing die size while improving power delivery efficiency
Solution Approach 2:
The patent uses conductive adhesive as an intermediary material between the substrate and die to establish direct electrical connection for power delivery. The conductive adhesive replaces traditional wire bonds and enables direct power path from substrate bond pads through the adhesive layer to the die core, solving the power delivery issue without increasing die size
2Power
If perimeter bond pads are used for power delivery, then power can be supplied to die, but routing constraints cause IR drop and thermal issues
Solution Approach 1:
The patent moves power delivery from the traditional perimeter routing path to a direct vertical path through the conductive adhesive layer. This dimensional change creates a direct electrical connection from substrate to die core, minimizing current path length and reducing IR drop while improving power delivery efficiency
Solution Approach 2:
The patent extracts the power delivery function from the perimeter bond pad routing system and creates a separate direct power path through the conductive adhesive. This separates power delivery from signal routing, allowing optimized power paths that minimize IR drop independent of signal trace routing constraints
3Ease of manufacture
If conventional wire bond packaging is used, then manufacturing is simple, but power and ground coupling is inefficient
Solution Approach 1:
The patent makes the conductive adhesive serve multiple functions: it acts as both the bonding material to attach the die to the substrate and as the electrical interconnect for power and ground delivery. This multi-functionality maintains manufacturing simplicity while dramatically improving power and ground coupling efficiency compared to separate bonding and interconnecting processes
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This solution effectively supplies power to the die core, reduces thermal management needs, and minimizes die size by eliminating perimeter Vdd pads, allowing for cost-effective wire bond packaging with improved power and ground coupling similar to flip-chip packaging.
Implementation Method 1
attached to the die and packaging substrate via conductive adhesive
Implementation Method 2
attached to the die and packaging substrate via conductive adhesive
Implementation Method 3
allowing direct power supply to the die core and minimizing routing, thereby reducing IR drop
Data Source
AI summary
A semiconductor device (601) is provided which comprises a substrate (603); a semiconductor device (605) disposed on said substrate and having a first major surface; a first metal strap (615) which is in electrical contact with said substrate and which is adapted to provide power to a first region (608) of said semiconductor device; and a second metal strap (616) which is in electrical contact with said substrate and which is adapted to provide ground to a second region (609) of said semiconductor device.