Metal Substrate Package Module with Shock-Absorbing Layer
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Solution Overview
Problem
High power semiconductor devices packaged with metal substrates face reliability issues due to significant thermal expansion coefficient differences between the metal substrate and the semiconductor device, leading to stress and reduced lifespan during high-temperature operations.
Innovation Solution
A package module structure using a metal substrate with a shock-absorbing substrate having a thermal expansion coefficient similar to that of the semiconductor device, formed by selectively anodizing the metal substrate and creating a mounting groove for the semiconductor device, which minimizes stress caused by thermal expansion differences.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Loss of energy
If a metal substrate is used to package high power semiconductor devices, then thermal conduction characteristics are improved and heat is effectively released, but stress occurs at the interface between the metal substrate and semiconductor device due to thermal expansion coefficient difference
Solution Approach 1:
The patent employs a composite substrate structure consisting of a metal substrate layer and a shock-absorbing substrate layer. The metal substrate provides excellent thermal conduction for heat dissipation, while the shock-absorbing substrate layer (made of materials like ceramic or resin with appropriate thermal expansion coefficients) compensates for thermal expansion stress. This composite structure resolves the contradiction by combining materials with complementary properties to simultaneously achieve effective heat release and reduced thermal stress.
Solution Approach 2:
The shock-absorbing substrate layer acts as an intermediary between the metal substrate and the semiconductor device. This intermediate layer has thermal expansion characteristics that match the semiconductor device, thereby mediating the thermal expansion mismatch between the metal substrate and the device. The intermediary layer absorbs thermal stress while maintaining effective heat transfer pathways, thus protecting the solder joints from stress-induced failures.
2Temperature
If a ceramic substrate is used to package high power semiconductor devices, then heat resistance is improved, but processing difficulty and cost increase
Solution Approach 1:
The substrate is segmented into two functional layers: a metal substrate layer that provides ease of processing and cost-effectiveness, and a shock-absorbing substrate layer that provides heat resistance and thermal expansion matching. By dividing the substrate into separate layers with specialized functions, the patent achieves the heat resistance of ceramic substrates while maintaining the manufacturing advantages of metal substrates.
3Quantity of substance
If a resin substrate is used to package high power semiconductor devices, then cost is reduced, but thermal conduction characteristics deteriorate and deformation occurs at high temperature
Solution Approach 1:
The patent creates a composite substrate where a metal substrate layer (with excellent thermal conduction) is combined with a shock-absorbing substrate layer. This composite structure provides superior thermal conduction characteristics compared to resin substrates, while the overall cost remains lower than ceramic substrates. The metal substrate ensures effective heat dissipation, preventing the thermal conduction deterioration that occurs with resin substrates.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enhances the solder joint reliability and overall package reliability by reducing stress from thermal expansion differences, ensuring stable operation and extended lifespan of high power semiconductor devices.
Implementation Method 1
an oxide layer which is formed by selectively anodizing the metal substrate
Implementation Method 2
a shock-absorbing substrate that is installed to be exposed at a bottom portion of a mounting groove of the oxide layer to mount the semiconductor device and that is made of a material having a thermal expansion coefficient in a range that is similar to that of a material of the semiconductor device
Data Source
AI summary
A method of manufacturing a package module structure of a high power device using a metal substrate that can improve reliability by minimizing stress due to a thermal expansion coefficient difference between a metal substrate and a semiconductor device includes: preparing a metal substrate; forming an oxide layer by selectively anodizing the metal substrate; forming a mounting groove for mounting a semiconductor device by etching a portion of the oxide layer; installing a shock-absorbing substrate that is made of a material having a thermal expansion coefficient in a range similar to a material of a semiconductor device to expose the entirety or a portion of a bottom portion of the mounting groove; mounting the semiconductor device in the shock-absorbing substrate exposed to the mounting groove; and electrically connecting an electrode terminal of the semiconductor device and an electrode line formed in an upper surface of the oxide layer.