Metal Substrate TMV Structures for Dense Interconnect and Heat Dissipation
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Solution Overview
Problem
Current semiconductor packaging technologies face challenges in achieving high interconnect densities, low latency, and efficient thermal management due to limitations in through vias, mechanical strength, and heat dissipation, particularly with Through Silicon Vias (TSVs) and Through Glass Vias (TGVs, which restrict the integration of high-resolution components and lead to increased power consumption and latency.
Innovation Solution
The development of metal substrates with through metal vias (TMVs) surrounded by a dielectric material, along with the formation of in-substrate structures such as in-substrate planes, thermal channels, waveguides, and antennas, which enable efficient signal transmission, power routing, and thermal management by ablating shapes into the metal substrate and filling them with dielectric material to create isolated regions.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If Through Silicon Vias (TSVs) and Through Glass Vias (TGVs) are used, then vertical connectivity is achieved, but mechanical strength is reduced and heat dissipation is restricted
Solution Approach 1:
The patent uses a composite structure combining metal substrate, dielectric material, and conductive material to create Through Metal Vias (TMVs). The metal substrate provides mechanical strength while the dielectric and conductive materials provide electrical connectivity, resolving the contradiction between mechanical integrity and vertical connectivity.
2Reliability
If Through Silicon Vias (TSVs) and Through Glass Vias (TGVs) are used, then vertical connectivity is achieved, but heat dissipation is restricted
Solution Approach 1:
The patent introduces thermal channels as intermediary structures that facilitate heat dissipation. These channels provide dedicated pathways for thermal management, allowing heat to be efficiently removed from high-density interconnect regions without compromising the vertical connectivity provided by TMVs.
3Quantity of substance
If standard device I/Os with time-domain multiplexing (TDM) are used, then virtual pin count is increased, but latency increases by 4×-32× and power consumption increases
Solution Approach 1:
The patent segments the interconnect architecture into multiple independent TMVs, each providing dedicated vertical connectivity pathways. This eliminates the need for TDM multiplexing by allowing simultaneous independent signal transmission through multiple vias, thereby reducing latency while maintaining high pin count capability.
4Quantity of substance
If standard device I/Os with time-domain multiplexing (TDM) are used, then virtual pin count is increased, but power consumption increases
Solution Approach 1:
The patent divides the I/O architecture into multiple parallel TMV pathways, enabling simultaneous signal transmission without multiplexing. This segmentation eliminates the switching and signal reconstruction operations required by TDM, significantly reducing power consumption while maintaining high virtual pin count.
5Quantity of substance
If high-density interconnect structures are integrated, then routing density and IO density are increased, but manufacturing complexity increases
Solution Approach 1:
The patent merges multiple fabrication steps into an integrated process flow for creating TMVs. By combining dielectric deposition, conductive material filling, and via formation into a unified manufacturing sequence, the patent achieves high routing density while controlling manufacturing complexity through process integration.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enhances interconnect density, reduces latency and power consumption, and improves thermal management, allowing for the integration of high-resolution components and supporting high-frequency performance while maintaining mechanical integrity.
Implementation Method 1
ablating shapes into the metal substrate
Data Source
AI summary
A method of forming In-Substrate Structures (ISS) and isolation regions, including, but not limited to Through Metal Vias (TMV), Dielectric Isolation Vias (DIV), and Dielectric Isolation Pockets (DIP) in a metal substrate to provide enhanced operations for semiconductor packages incorporating a metal substrate.