Metal Support Frame Structure for Heat-Dissipating Embedded Packaging
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Solution Overview
Problem
Current semiconductor packaging methods using dielectric materials for support frames have low heat dissipation rates, failing to meet the requirements of high-power devices, and require costly high-heat-dissipation materials.
Innovation Solution
A support frame structure utilizing a metal plate with metal pillars and dielectric layers, where metal pillars are formed through electroplating and photolithography, enabling heat conduction and improved rigidity, and reducing the risk of instability during manufacturing.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Temperature
If dielectric material is used as the main body of the support frame, then the frame structure can be formed with metal through hole pillars, but the heat dissipation rate is low and cannot meet high-power device requirements
Solution Approach 1:
The patent changes the fundamental material parameter of the support frame from dielectric material to metal material. This parameter change fundamentally improves the heat dissipation rate while maintaining manufacturing feasibility through established metal processing techniques such as laser cutting, bending, and welding.
Solution Approach 2:
The patent employs composite material construction by combining metal support frame with dielectric layers and metal through hole pillars. This composite structure leverages the high thermal conductivity of metal for heat dissipation while utilizing dielectric materials for electrical insulation and structural support.
2Strength
If the thickness of the frame is increased to improve rigidity, then the height of metal pillars must be increased, which increases the risk of instability during electroplating and non-exposure during thinning
Solution Approach 1:
The patent resolves the contradiction by shifting the primary source of rigidity from the vertical dimension (tall metal pillars) to the horizontal dimension (thick metal support frame). The metal frame itself provides structural stiffness, allowing shorter metal pillars that are more stable during electroplating and less prone to non-exposure during thinning processes.
Solution Approach 2:
The patent applies preliminary action by forming the metal support frame with adequate thickness before creating the metal pillars. This preliminary structural preparation ensures that the frame provides sufficient rigidity support, allowing subsequent electroplating and thinning processes to be performed more reliably without pillar instability or non-exposure issues.
3Temperature
If dielectric material with high heat dissipation is used, then heat dissipation performance improves, but the cost increases significantly
Solution Approach 1:
The patent changes the heat dissipation mechanism from relying on expensive high-heat-dissipation dielectric materials to utilizing the inherent high thermal conductivity of metal materials. This parameter change achieves superior heat dissipation performance while significantly reducing material costs, as metal frames are more economical than specialized high-performance dielectric materials.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The metal-based support frame enhances heat dissipation, reduces warpage, and maintains structural integrity while being cost-effective and meeting design specifications.
Implementation Method 1
metal, due to its good heat conductivity, can pass the heat generated when the chips are working through the metal layer in the frame to reduce the temperature of the chips
Implementation Method 2
forming at least one upper metal pillar on an upper surface of the metal plate by electroplating
Data Source
AI summary
Disclosed are a method for manufacturing a support frame structure and a support frame structure. The support frame structure is used for embedded packaging, and includes: a metal plate comprising a support region and an opening region, at least one upper dielectric hole and at least one lower dielectric hole being formed respectively in upper and lower surfaces of the support region, the upper dielectric hole being communicated with the lower dielectric hole; at least one set of metal pillars comprising an upper metal pillar and a lower metal pillar, the upper metal pillar and the lower metal pillar being vertically connected to upper and lower surfaces of the metal plate, respectively; a dielectric layer comprising an upper dielectric layer and a lower dielectric layer, the upper dielectric layer and the lower dielectric layer being correspondingly formed on the upper surface of the metal plate and the upper dielectric hole and on a lower surface of the metal plate and the lower dielectric hole, respectively; and at least one core embedding cavity arranged in the opening region, running through the dielectric layer and the metal plate, and spaced from the upper dielectric hole and the lower dielectric hole by the dielectric layer.