Metal Tab Die Attach Paddle for Power Device Packages
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Solution Overview
Problem
Conventional power device packages experience stress and deformation due to the difference in thermal expansion coefficients between semiconductor dies and lead frames, leading to performance deterioration, cracking, and penetration of foreign substances.
Innovation Solution
A power device package is designed with a metal tab die attach paddle (DAP) attached to the lead frame, using conductive adhesive materials with varying melting points and CTEs to minimize stress, and a sealant with an extended surface creepage distance to prevent impurities from entering.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Device complexity
If the semiconductor die is directly bonded to the lead frame, then the bonding process is simple, but the semiconductor die is stressed and deformed due to the difference in coefficient of thermal expansion (CTE) between the die and lead frame
Solution Approach 1:
A metal tab die attach paddle (DAP) is introduced as an intermediary component between the semiconductor die and the lead frame. This DAP serves as a stress buffer that compensates for the CTE mismatch, preventing stress and deformation of the semiconductor die while maintaining bonding simplicity.
Solution Approach 2:
The invention changes the thermal expansion parameter by selecting a metal tab material whose CTE is between that of the semiconductor die and the lead frame. This intermediate CTE value allows the metal tab to act as a gradient transition, reducing thermal stress on the die during temperature changes.
2Volume of moving object
If the semiconductor die is directly bonded to the lead frame, then the package structure is compact, but the stress causes cracking and foreign substance penetration
Solution Approach 1:
The metal tab DAP acts as a protective intermediary that prevents stress-induced cracking. By absorbing and distributing thermal stress, it protects the semiconductor die and bonding interfaces from cracking, thereby preventing foreign substance penetration through cracks.
Solution Approach 2:
The metal tab DAP provides beforehand cushioning by pre-absorbing thermal expansion stresses before they can propagate to the semiconductor die and bonding interfaces. This preventive cushioning eliminates the root cause of cracking and subsequent contamination.
3Ease of manufacture
If the semiconductor die size is limited to the lead frame size, then the lead frame can be used directly, but larger semiconductor dies cannot be accommodated
Solution Approach 1:
The metal tab DAP serves as a flexible intermediary platform that can be manufactured in various sizes independent of the lead frame constraints. This allows semiconductor dies larger than the lead frame to be accommodated, as the DAP can be sized to match the die while still attaching to the lead frame.
Solution Approach 2:
The bonding structure is segmented into three independent components: the lead frame, the metal tab DAP, and the semiconductor die. This segmentation allows each component to be optimized independently, enabling the die size to exceed lead frame dimensions while maintaining manufacturing simplicity.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution significantly reduces stress on the semiconductor die, enhances sealant bonding, and allows for larger semiconductor dies by compensating for thermal expansion differences, thereby improving package reliability and preventing impurity penetration.
Implementation Method 1
the stress is caused by the difference between a coefficient of thermal expansion (CTE) of the semiconductor die and that of a lead frame
Implementation Method 2
The metal tab DAP may be attached to the lead frame using a first conductive adhesive material, the power device die may be bonded to the metal tab DAP using a second conductive adhesive material
Data Source
AI summary
A metal tab die attach paddle (DAP) disposed between the lead frame and a power device die in a power device package reduces the stress exerted on the semiconductor power device die caused by the different coefficients of thermal expansion (CTE) of the semiconductor power device die and the lead frame. In addition the power device package substantially prevents impurities from penetrating into the power device package by increasing the surface creepage distance of a sealant resulting from the metal tab DAP and an optional swaging of the lead frame.


