Metal Traces Protected Sidewalls Corrosion

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Solution Overview

Problem

Metal traces in thin-film transistor circuitry, used in displays and other components, are prone to corrosion, which can be prevented by additional complex photolithographic processes, leading to undesired process complexity.

Innovation Solution

Forming metal traces with insulating protective sidewall structures by treating exposed edge surfaces with methods like oxidation, nitridation, and deposition of insulating layers, using multiple metal layers with barrier metals to prevent corrosion.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If additional photolithographic masks and process steps are used to form protective structures over metal traces, then corrosion prevention is improved, but process complexity increases

Engineering Contradiction:
Improvecorrosion preventionVSAvoidprocess complexity
Core Design Contradiction:
ReliabilityVSDevice complexity

Solution Approach 1:

The metal trace structure serves its own protective function by incorporating barrier metal layers that automatically prevent corrosion without requiring external protective structures. The core metal layer is sandwiched between barrier metal layers that are inherently resistant to corrosion, making the structure self-protecting

Inventive Principle:
Principle #25Self-service

Solution Approach 2:

The metal trace is constructed as a composite structure with a core metal layer (conductive but susceptible to corrosion) sandwiched between barrier metal layers (less conductive but corrosion-resistant). This composite approach combines the advantages of high conductivity with corrosion protection

Inventive Principle:
Principle #40Composite materials

2Reliability

If barrier metal layers are added around core metal layer, then corrosion resistance is improved, but manufacturing complexity increases

Engineering Contradiction:
Improvecorrosion resistanceVSAvoidmanufacturing complexity
Core Design Contradiction:
ReliabilityVSEase of manufacture

Solution Approach 1:

The deposition of barrier metal layers and core metal layer is merged into a single continuous deposition process, forming both layers simultaneously in one manufacturing step. This eliminates the need for separate processing steps and reduces overall manufacturing complexity

Inventive Principle:
Principle #5Merging (Combining)

Solution Approach 2:

The barrier metal layers are deposited first to form a protective framework, and then the core metal layer is deposited within this framework. This preliminary action of creating the barrier structure first simplifies subsequent processing and ensures proper layer formation

Inventive Principle:
Principle #10Preliminary action

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The protective sidewall structures effectively prevent corrosion of the core metal layer, enhancing the reliability and longevity of metal traces in thin-film circuitry without increasing process complexity.

Implementation Method 1

Surface treatments such as oxidation, nitridation, and other processes may be used in forming the protective sidewall structures

Methodology Applied
Scientific EffectOxidation: Oxidation

Implementation Method 2

Surface treatments such as oxidation, nitridation, and other processes may be used in forming the protective sidewall structures

Methodology Applied
Scientific EffectNitridation: Nitriding

Implementation Method 3

deposition of insulating layers

Methodology Applied
Scientific EffectDeposition: Deposition (physical)

Data Source

PatentUS10224238B2Electrical components having metal traces with protected sidewalls
Publication Date: 2019.03.05 APPLE INC
  • US10224238B2 patent drawing
  • US10224238B2 patent drawing
  • US10224238B2 patent drawing

AI summary

A component such as a display may have a substrate and thin-film circuitry on the substrate. The thin-film circuitry may be used to form an array of pixels for a display or other circuit structures. Metal traces may be formed among dielectric layers in the thin-film circuitry. Metal traces may be provided with insulating protective sidewall structures. The protective sidewall structures may be formed by treating exposed edge surfaces of the metal traces. A metal trace may have multiple layers such as a core metal layer sandwiched between barrier metal layers. The core metal layer may be formed from a metal that is subject to corrosion. The protective sidewall structures may help prevent corrosion in the core metal layer. Surface treatments such as oxidation, nitridation, and other processes may be used in forming the protective sidewall structures.