Metallic Base Substrate Cavity for Semiconductor Heat Dissipation
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Solution Overview
Problem
Semiconductor devices face heat dissipation challenges, particularly in power semiconductor devices, where heat generated during operation leads to thermal runaway, performance deterioration, and potential breakdown, due to limited thermal conductivity of existing heat dissipation methods.
Innovation Solution
A semiconductor package design featuring a metallic base substrate with high thermal conductivity and a heat dissipating member made of conductive material, arranged between the substrate and the semiconductor chip, allowing heat dissipation through both back and side surfaces, and an MLF-type package with a trench to separate ground and electrode portions for improved signal transmission.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Loss of energy
If a conventional heat dissipation method with limited thermal conductivity is used, then the device structure remains simple, but heat dissipation efficiency is insufficient leading to thermal runaway and performance deterioration
Solution Approach 1:
The patent merges the base substrate and heat dissipating member into a unified metallic structure where the base substrate itself serves as the heat dissipating member. This integration eliminates the need for separate heat dissipation components while achieving high heat dissipation efficiency through the inherent high thermal conductivity of the metallic base substrate.
Solution Approach 2:
The metallic base substrate performs multiple functions simultaneously: it provides mechanical support, electrical connection, and heat dissipation. This multi-functionality eliminates the need for dedicated heat dissipation components, resolving the contradiction between improving heat dissipation efficiency and maintaining structural simplicity.
2Volume of moving object
If wire bonding is used for electrical connection, then the package structure is simpler, but the package size increases and high-voltage/high-current applications are compromised
Solution Approach 1:
The patent extracts and eliminates the wire bonding process from the package structure. By directly mounting the semiconductor chip onto the metallic base substrate with integrated electrical contacts, the solution removes the need for separate wire bonding components, thereby reducing package size while maintaining electrical connection functionality.
Solution Approach 2:
The metallic base substrate serves as an intermediary that directly provides electrical connection between the semiconductor chip and external circuits. This eliminates the need for wire bonding as an intermediate connection method, reducing package size while supporting high-voltage and high-current applications through the inherent properties of the metallic substrate.
3Area of stationary object
If the heat dissipation area is increased by adding separate heat dissipation components, then heat dissipation efficiency improves, but the device complexity and manufacturing process become more complicated
Solution Approach 1:
The patent combines the heat dissipation function with the base substrate structure, eliminating the need for separate heat dissipation components. This merging approach increases the effective heat dissipation area through the entire base substrate surface while keeping the manufacturing process simple, as it utilizes the base substrate's inherent properties rather than adding complex components.
Solution Approach 2:
The metallic base substrate serves itself as the heat dissipation component, utilizing its own high thermal conductivity and extensive surface area. This self-service approach increases heat dissipation area without requiring additional components or complex manufacturing processes, thereby resolving the contradiction between heat dissipation efficiency and ease of manufacture.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Enhances heat dissipation efficiency by increasing the heat dissipation area and eliminating the need for wire bonding, resulting in a more efficient and compact semiconductor package suitable for high-voltage and high-current applications.
Implementation Method 1
a base substrate provided with at least one cavity and made of a metallic material; at least one semiconductor chip mounted in the cavity; and a heat dissipating member arranged in a gap between an inner surface of the cavity and the semiconductor chip
Data Source
AI summary
Disclosed is a semiconductor package including: a base substrate provided with at least one cavity and made of a metallic material; at least one semiconductor chip mounted in the cavity; and a heat dissipating member arranged in a gap between an inner surface of the cavity and the semiconductor chip.