Metallic Electrode Structure for Inductively Coupled Plasma Cooling
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Solution Overview
Problem
Conventional inductively coupled plasma (ICP) reactors face challenges in heat removal due to the poor thermal conductivity of dielectric materials, limiting high power, high pressure, and high thermal loading operations, and exotic materials like AIN are costly and impose design limitations.
Innovation Solution
A plasma processing apparatus with a metallic electrode structure extending through the chamber wall, allowing for efficient cooling and operation at high power and pressure conditions, using a single or multiple band segments connected in parallel to reduce voltage and suppress electric coupling, with discontinuities to confine plasma and prevent unwanted heating.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If conventional dielectric materials are used for the chamber wall, then the chamber structure is simple and cost-effective, but heat removal efficiency is poor
Solution Approach 1:
The chamber wall is constructed as a composite structure combining dielectric material with a metallic cooling structure. The dielectric provides electrical insulation while the metallic structure (with channels or fins) provides efficient thermal conduction for heat removal. This composite approach allows simultaneous achievement of electrical insulation, structural simplicity, and effective cooling.
Solution Approach 2:
A metallic cooling structure acts as an intermediary element embedded within or attached to the dielectric chamber wall. This intermediary component serves as a thermal bridge between the hot plasma region and the cooling system, enabling efficient heat transfer without compromising the electrical insulation properties of the dielectric material.
2Temperature
If advanced dielectric materials like AIN are used, then heat removal efficiency is improved, but cost increases and design limitations are imposed
Solution Approach 1:
The cooling function is segmented from the dielectric material itself and implemented through a separate metallic cooling structure. This segmentation allows the use of inexpensive, easily manufacturable dielectric materials while achieving effective cooling through the dedicated metallic cooling system with channels or fins.
Solution Approach 2:
Instead of using expensive advanced dielectric materials like AIN, the invention uses a conventional dielectric material combined with a metallic cooling structure that copies or replicates the thermal management function of the advanced materials, achieving similar cooling performance at lower cost and with greater design flexibility.
3Productivity
If high power operation is implemented, then reaction speed increases, but thermal loading increases making heat removal difficult
Solution Approach 1:
The cooling system is designed with dynamic cooling channels or adjustable fins that can adapt to varying thermal loads. The metallic cooling structure allows for flexible adjustment of cooling capacity to match the thermal loading conditions during high power operation, enabling sustained high reaction speeds without overheating.
4Quantity of substance
If high pressure operation is implemented, then plasma density increases, but heat generation increases making cooling more challenging
Solution Approach 1:
The heat generation problem is addressed by extracting thermal energy from the plasma region through the metallic cooling structure embedded in the chamber wall. The cooling channels or fins directly contact or are in close proximity to the plasma, enabling efficient extraction of excess heat generated during high pressure operation while maintaining high plasma density.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Enables efficient plasma generation and processing over a wide range of power and pressure conditions, minimizing thermal stress on dielectric materials and allowing for easier cooling, thus overcoming the limitations of conventional systems.
Implementation Method 1
the electrode structure is formed from a metallic material and configured to act as a primary winding of an inductively coupled plasma source
Implementation Method 2
RF power is applied to an externally positioned antenna, coil or band resulting in inductive coupling of energy into the process chamber
Data Source
Figure 1(a)
Figure 1(b)
Figure 2
AI summary
According to the invention there is provided a plasma processing apparatus for plasma processing a substrate comprising: a chamber comprising one or more walls, in which a portion of the walls of the chamber is an electrode structure formed from a metallic material and configured to act as a primary winding of an inductively coupled plasma source ; and an electrical signal supply device for supplying an electrical signal that drives the electrode structure as a primary winding of an inductively coupled plasma source to sustain an inductively coupled plasma within the chamber.