Metallic Gap Fill on Substrates Without Seams
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Solution Overview
Problem
Semiconductor fabrication processes face challenges in filling gap features on non-planar substrates with metallic films, particularly in high aspect ratio features, often resulting in the formation of undesirable seams that affect device performance.
Innovation Solution
The use of cyclical deposition processes, including atomic layer deposition and cyclical chemical vapor deposition, where a substrate with a gap feature is contacted with a metal precursor, a nitrogen precursor, and a halide growth inhibitor, both from internal and external sources, to fill the gap feature with a metal nitride or other metallic films, ensuring complete filling without seam formation.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If conventional deposition methods are used to fill gap features, then the deposition process is simple and fast, but seams form in high aspect ratio features reducing device performance
Solution Approach 1:
The deposition process is segmented into multiple distinct steps within each cycle: precursor exposure, purge, and co-deposition steps. This segmentation allows precise control over film formation, enabling complete gap filling without seam formation by carefully managing deposition in high aspect ratio features.
Solution Approach 2:
The patent employs periodic cyclic deposition where the substrate is repeatedly exposed to precursors in a controlled sequence over multiple cycles. This periodic action builds up the metallic film layer by layer, ensuring uniform coverage and complete filling of gap features while maintaining film continuity to prevent seams.
2Manufacturing precision
If cyclical deposition processes are used to prevent seam formation, then complete filling without seams is achieved, but the process time increases
Solution Approach 1:
The deposition process maintains continuity by performing co-deposition of multiple materials simultaneously in each cycle rather than sequentially. This continuous useful action reduces the total number of cycles needed while still achieving complete gap filling with uniform coverage and no seams.
Solution Approach 2:
The patent optimizes deposition parameters including temperature, pressure, and precursor flow rates to enhance deposition efficiency. By carefully controlling these parameters, the process achieves complete gap filling in fewer cycles, reducing overall process time while maintaining high manufacturing precision and preventing seam formation.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This method effectively fills gap features with metallic films, preventing seam formation and enhancing semiconductor device performance by ensuring uniform and complete deposition within complex geometries.
Implementation Method 1
contacting the substrate a metal precursor; contacting the substrate with a nitrogen precursor
Implementation Method 2
contacting the substrate with a halide growth inhibitor
Data Source
AI summary
Methods for filling a gap feature on a substrate surface are disclosure. The methods may include: providing a substrate comprising one or more gap features into a reaction chamber; and depositing a metallic gap-fill film within the gap feature by performing repeated unit cycles of a cyclical deposition process. Semiconductor structures including metallic gap-fill films are also disclosed.