Metallic Moisture Barrier for Implantable Circuitry
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Solution Overview
Problem
Existing semiconductor devices face challenges in preventing moisture ingress from the top and sides, as commonly used insulator materials like silicon oxide can be penetrated, potentially damaging sensitive circuitry in devices such as implantable medical devices.
Innovation Solution
A hermetic interface is created using semiconductor substrates and metallic structures surrounding the circuit devices, forming a moisture ingress barrier by bonding the substrates and metallic structures to restrict moisture entry, employing wafer-scale fabrication techniques and microelectronic processing methods.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If commonly used insulator materials like silicon oxide are employed to seal the die, then the device structure is simple and easy to manufacture, but moisture can penetrate these materials and damage the circuitry
Solution Approach 1:
The sealing function is divided into multiple components: a bottom substrate that blocks moisture from below, lateral seal structures at the die edges, and an upper seal layer. This segmentation allows each component to address specific moisture ingress paths, achieving comprehensive protection while using standard manufacturing materials and processes.
Solution Approach 2:
Lateral seal structures act as intermediary elements between the die edges and the active region. These structures, formed using vertically oriented contacts and metal die seal layers, create a moisture barrier that bridges the gap between the substrate and upper seal layer, preventing moisture penetration through the side surfaces.
2Reliability
If the bottom substrate is used to block moisture from the bottom, then the manufacturing process is simple, but moisture can still enter from the top and sides through insulator materials
Solution Approach 1:
The sealing system is segmented into three functional zones: bottom substrate sealing, lateral edge sealing, and top surface sealing. This multi-zone approach ensures that moisture ingress is blocked from all directions, with each zone implemented using appropriate structures that balance effectiveness and manufacturing complexity.
Solution Approach 2:
The sealing approach transitions from two-dimensional planar sealing to three-dimensional volumetric sealing by adding lateral seal structures that extend vertically along the die edges. This dimensional expansion creates a comprehensive moisture barrier that addresses ingress paths from bottom, sides, and top simultaneously.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution effectively prevents moisture ingress into semiconductor devices, protecting sensitive circuitry and ensuring the reliability of implantable medical devices and other moisture-sensitive electronics.
Implementation Method 1
a metallic structure laterally surrounding the at least one circuit device and forming at least part of the moisture ingress barrier
Implementation Method 2
The connection surface of the first portion is bonded to the connection surface of the second portion to form a hermetic interface
Data Source
AI summary
Apparatus and methods to protect circuitry from moisture ingress, e.g., using a metallic structure as part of a moisture ingress barrier.