Metallic Ring Plasma Density Control in Substrate Treating Apparatus
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Solution Overview
Problem
In semiconductor device manufacturing, existing plasma etching apparatuses face challenges in uniformly controlling plasma density across the substrate, particularly at the extreme edges, leading to inconsistent etching results due to differences in plasma density.
Innovation Solution
A substrate treating apparatus is designed with a metallic ring between the electrostatic chuck and focus ring, allowing for voltage control to adjust plasma density uniformly across the substrate, including the extreme edges, using a DC power source and insulation films to manage the plasma distribution.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a dielectric plate smaller than the substrate is used to prevent arcing, then arcing is prevented, but plasma density at the extreme edge of the substrate cannot be controlled and differs from other areas
Solution Approach 1:
The invention applies local quality by introducing a metallic ring specifically at the edge region of the electrostatic chuck to control plasma density at the extreme edge of the substrate. This localized structural modification allows different regions (center and edge) to have different plasma density characteristics, resolving the contradiction between preventing arcing and maintaining plasma density uniformity across the entire substrate surface.
Solution Approach 2:
The metallic ring acts as an intermediary element between the dielectric plate and the substrate edge. It mediates the plasma distribution by providing a conductive path that enables independent control of plasma density at the substrate extreme edge, thereby allowing the system to maintain both arcing prevention (through the dielectric plate) and plasma density uniformity (through the metallic ring control).
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This solution ensures uniform plasma distribution across the substrate, improving etching consistency and reducing defects by adjusting the voltage applied to the metallic ring to match plasma densities between the central area and extreme edges.
Implementation Method 1
an electrostatic chuck including an upper body having a support surface that suctions the substrate
Implementation Method 2
a plasma generating unit configured to generate plasma from the gas
Implementation Method 3
in order to form plasma, an electromagnetic field is formed in an interior space of a chamber and the electromagnetic field excites a process gas provided into the chamber into a plasma state
Implementation Method 4
a metallic ring provided between the upper body of the electrostatic chuck and the focus ring and configured to control plasma in an extreme edge of the substrate
Data Source
AI summary
Disclosed is a substrate treating apparatus. The substrate treating apparatus includes a chamber having a treatment space in the interior thereof, a support unit configured to support a substrate in the treatment space, a gas supply unit configured to supply a gas into the treatment space, and a plasma generating unit configured to generate plasma from the gas, wherein the support unit includes an electrostatic chuck including an upper body having a support surface that suctions the substrate and a lower body extending from the upper body to a lower side, wherein the lower body has an extension part extending laterally from the upper body, a focus ring disposed on the extension part of the electrostatic chuck, and a metallic ring provided between the upper body of the electrostatic chuck and the focus ring and configured to control plasma in an extreme edge of the substrate.