Metallic Top Coat for Semiconductor Chamber Components

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Solution Overview

Problem

In the semiconductor industry, plasma etch and clean processes can lead to corrosion of manufacturing chamber components, resulting in particle contamination and device defects due to the corrosive nature of high-speed plasma, which existing materials fail to adequately address.

Innovation Solution

A method involving cold spray coating of metal powders onto components, followed by anodization to form a dense and erosion-resistant coating, utilizing materials like Aluminum, Titanium, or Copper alloys, and subsequent thermal treatment to create a barrier layer, reducing surface roughness and enhancing plasma resistance.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If conventional chamber materials are used, then manufacturing cost is reduced, but plasma resistance and component lifetime are insufficient

Engineering Contradiction:
Improveplasma resistanceVSAvoidmanufacturing cost
Core Design Contradiction:
ReliabilityVSEase of manufacture

Solution Approach 1:

The patent applies composite materials by combining a metallic coating layer (Aluminum, Titanium, or Copper alloy) with an anodization layer to create a composite structure on the chamber component surface. This composite coating provides superior plasma resistance and erosion protection compared to conventional single-material components, while allowing the base component to use cost-effective materials like aluminum alloys.

Inventive Principle:
Principle #40Composite materials

2Productivity

If chamber components are exposed to high-speed plasma, then manufacturing process capability is maintained, but particle contamination and device defects increase

Engineering Contradiction:
Improvemanufacturing process capabilityVSAvoidparticle contamination
Core Design Contradiction:
ProductivityVSObject-generated harmful factors

Solution Approach 1:

The patent implements preliminary anti-action by applying a corrosion-resistant metallic coating and anodization layer to chamber components before plasma exposure. This protective barrier prevents plasma-induced corrosion and particle generation at the source, eliminating the need for subsequent cleaning operations and maintaining manufacturing capability without particle contamination.

Inventive Principle:
Principle #9Preliminary anti-action

3Reliability

If component lifetime is extended through material selection, then plasma resistance improves, but flexural strength and thermal shock resistance may be compromised

Engineering Contradiction:
Improvecomponent lifetimeVSAvoidflexural strength and thermal shock resistance
Core Design Contradiction:
ReliabilityVSStrength

Solution Approach 1:

The patent applies local quality by providing plasma-resistant coating only on the surface of chamber components that are exposed to plasma, while the bulk material maintains its inherent mechanical properties. The coating thickness is optimized to provide sufficient plasma protection without compromising the component's overall structural integrity, flexural strength, and thermal shock resistance.

Inventive Principle:
Principle #3Local quality

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The solution significantly reduces particle contamination and extends the lifetime of components by providing a dense, erosion-resistant coating that minimizes on-wafer defects and improves the durability of manufacturing chamber components.

Implementation Method 1

cold spray coating a metal powder on the component to form a coating on the component

Methodology Applied
Scientific EffectCold spray deposition: Deposition (physical)

Implementation Method 2

anodizing the coating to form an anodization layer

Methodology Applied
Scientific EffectAnodization: Anodising

Implementation Method 3

heating the component after cold spray coating to a temperature in a range from about 200 degrees C. to about 1450 degrees C. for more than about 30 minutes to form a barrier layer between the component and the coating

Methodology Applied
Scientific EffectThermal diffusion: Diffusion

Data Source

PatentUS10260160B2High purity metallic top coat for semiconductor manufacturing components
Publication Date: 2019.04.16 APPLIED MATERIALS INC
  • US10260160B2 patent drawing
  • US10260160B2 patent drawing
  • US10260160B2 patent drawing

AI summary

A component for a manufacturing chamber comprises a coating and an anodization layer on the coating. The anodization layer has a thickness of about 2-10 mil. The anodization layer comprises a low porosity bottom layer portion having a porosity that is less than about 40-50% and a porous columnar top layer portion having a porosity of about 40-40% and comprising a plurality of columnar nanopores having a diameter of about 10-50 nm.