Interconnection Die Packaging Between Metallization Portions

Resolve Bottlenecks,
Find Innovative Solutions
Generate Solutions

Solution Overview

Problem

There is a need for packages with improved performance and reduced size that incorporate metallization portions and integrated devices, while maintaining high-density interconnects and aspect ratios.

Innovation Solution

The package design includes a first metallization portion with dielectric layers and interconnects, an interconnection die, and a second metallization portion with dielectric layers and interconnects, where the interconnection die is used to couple the first and second metallization portions, and an encapsulation layer is placed between them, allowing for high-density interconnects and a compact form factor.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Productivity

If an interconnection die is used to couple metallization portions, then high-density interconnects with high aspect ratios are achieved, but the device complexity increases

Engineering Contradiction:
Improveinterconnect densityVSAvoidpackage structure
Core Design Contradiction:
ProductivityVSDevice complexity

Solution Approach 1:

The package is divided into separate metallization portions (first and second) that are coupled through an interconnection die, allowing independent optimization of each metallization layer while achieving high interconnect density through the interposer structure

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

An interconnection die (interposer) is introduced as an intermediary component between the first and second metallization portions, enabling high-aspect-ratio interconnects to pass through the encapsulation layer and providing a mediator that facilitates electrical coupling while maintaining package compactness

Inventive Principle:
Principle #24Intermediary (Mediator)

2Volume of moving object

If an encapsulation layer is placed between metallization portions, then the form factor is reduced, but the manufacturing complexity increases

Engineering Contradiction:
Improvepackage sizeVSAvoidfabrication process
Core Design Contradiction:
Volume of moving objectVSEase of manufacture

Solution Approach 1:

The encapsulation layer is positioned in the vertical dimension between metallization portions, allowing horizontal integration of multiple metallization layers while maintaining a thin vertical profile, thus reducing overall package volume without requiring lateral expansion

Inventive Principle:
Principle #17Another dimension (Dimensionality change)

Solution Approach 2:

The encapsulation layer is formed as part of the preliminary packaging process before final assembly, integrating the protective and spacing functions into the base package structure rather than adding them as separate subsequent steps

Inventive Principle:
Principle #10Preliminary action

Data Source

PatentUS20230369230A1Package comprising an interconnection die located between metallization portions
Publication Date: 2023.11.16 QUALCOMM INC
  • US20230369230A1 patent drawing
  • US20230369230A1 patent drawing
  • US20230369230A1 patent drawing

AI summary

A package comprising a first metallization portion, a first integrated device, an interconnection die, a second metallization portion, and an encapsulation layer. The first metallization portion includes at least one first dielectric layer and a first plurality of metallization interconnects. The first integrated device is coupled to the first metallization portion. The interconnection die is coupled to the first metallization portion. The second metallization portion coupled to the first metallization portion through the interconnection die such that the first integrated device and the interconnection die are located between the first metallization portion and the second metallization portion. The second metallization portion includes at least one second dielectric layer and a second plurality of metallization interconnects. The encapsulation layer coupled to the first metallization portion and the second metallization portion, wherein the encapsulation layer is located between the first metallization portion and the second metallization portion.