Metastructured Conductive Channel for High-Frequency Low-Loss Operation
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Solution Overview
Problem
Current electronic devices face limitations in achieving high cut-off frequencies, low losses, and large breakdown voltages due to fundamental issues such as carrier injection through tunneling junctions, high parasitic capacitances, and high electric fields.
Innovation Solution
The development of electronic metadevices that utilize collective and controllable electromagnetic interactions in deep-subwavelength scales, enabled by electrical metastructures, to overcome the theoretical limits of classical electron devices.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Speed
If the channel length is reduced to increase operating speed, then the device can operate at higher frequencies, but the carrier injection through tunneling junctions dominates the channel resistance and parasitic capacitances limit the maximum operating frequency
Solution Approach 1:
The patent replaces traditional electronic carrier transport mechanisms with electromagnetic field manipulation. By using metastructures to control electromagnetic interactions at deep-subwavelength scales, the device achieves high-frequency operation without relying on carrier injection through tunneling junctions, thereby avoiding the resistance issues that plague scaled electronic devices
Solution Approach 2:
The patent transitions from controlling electron flow in one dimension (traditional semiconductor channel) to manipulating electromagnetic fields in multiple dimensions through metastructures. This dimensional approach allows simultaneous achievement of low resistance and high frequency by distributing electromagnetic interactions across the metastructure geometry rather than confining carriers to a narrow channel
2Productivity
If traditional electron devices are used, then device simplicity is maintained, but they perform inefficiently at high frequencies, much below the potential enabled by the semiconductor materials
Solution Approach 1:
The patent fundamentally changes the operating parameter regime by moving from electron-based transport to electromagnetic field-based operation. This parameter shift enables access to terahertz frequency ranges while utilizing the full potential of wide-bandgap semiconductor materials, achieving productivity gains that justify the increased structural complexity of metastructures
3Length of moving object
If ultra-scaled devices are used, then miniaturization is achieved, but they can only hold a few volts due to extremely high electric fields, limiting maximum delivered power
Solution Approach 1:
The patent segments the electromagnetic interaction into multiple discrete metastructure elements distributed across the device. This segmentation allows the electric field to be distributed and controlled across many small interaction points rather than concentrated in a single ultra-scaled channel, enabling higher voltage operation and increased power delivery while maintaining miniaturization
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
These metadevices achieve very high cut-off frequencies, ultralow losses, and large breakdown voltages, enabling the next generation of high-performance semiconductor devices that exploit the full potential of electronic materials.
Implementation Method 1
The at least one metal layer or material (5) and the at least one barrier layer or material (7) are configured to support transverse magnetic TM modes that interact with the metallic texture (15) to permit current density confinement
Implementation Method 2
The at least one barrier layer or material (7) is configured to polarize an electric field Ez in a thickness direction d of the barrier layer to assure a strong electric field coupling between (i) the metal layer or material (5) and/or the metastructures (15) of the metal layer or material (5) and (ii) the conductive channel (3)
Data Source
AI summary
Electronic metadevice comprising a conductive channel; a metal layer superposed on the conductive channel; and a barrier layer located between the metal layer and the conductive channel. The metal layer includes at least one recess extending through the metal layer to define at least one metallic metastructure comprising at least one first metal layer portion adjacent to at least one second metal layer portion. The recess extends through the metal layer to define a micro-structured or a nano-structured first metal layer portion comprising at least one first metallic extension or finger extending away from a first support of the first metal layer portion towards the second metal layer portion; and a micro-structured or a nano-structured at least one second metal layer portion comprising at least one second metallic extension or finger extending away from a second support of the second metal layer portion towards the first metal layer portion.