Mg-Ge Oxide Epitaxy for Ultrawide-Bandgap Semiconductor Switching
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Solution Overview
Problem
Current semiconductor materials face limitations in achieving ultrawide bandgaps, direct bandgaps, and high dielectric breakdown voltages, which are essential for advanced electronic and optoelectronic devices, particularly for deep ultraviolet applications and high-power switching systems.
Innovation Solution
The development of magnesium germanium oxide (MgxGe1-xO2-x) epitaxial layers with specific crystal symmetries and doping strategies, allowing for the formation of high-quality single crystal structures with ultrawide bandgaps, direct bandgaps, and adjustable conductivity types, thereby enabling the creation of efficient semiconductor devices.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If conventional semiconductor materials are used, then device manufacturing is easier, but ultrawide bandgap and direct bandgap properties cannot be achieved
Solution Approach 1:
The patent employs composite material strategy by creating MgxGe1-xO2-x compounds that combine magnesium oxide and germanium oxide in specific ratios. This composite approach enables achieving ultrawide bandgap (5.0-6.5 eV) and direct bandgap properties that neither parent compound can provide alone, while maintaining crystal structure compatibility with common substrates like MgO and LiF for practical device fabrication
Solution Approach 2:
The patent utilizes parameter changes by systematically varying the composition parameter x in MgxGe1-xO2-x to tune the bandgap energy from 5.0 eV to 6.5 eV. This continuous parameter adjustment allows optimization of optical and electrical properties for specific applications while maintaining manufacturability through controlled epitaxial growth processes
2Reliability
If wide bandgap materials are used, then breakdown voltage tolerance improves, but on-state electrical losses increase
Solution Approach 1:
The patent applies parameter changes by adjusting the Mg content (x parameter) in MgxGe1-xO2-x to optimize the balance between breakdown voltage tolerance and on-state electrical losses. By controlling composition and doping levels, the material achieves both high voltage tolerance and reduced resistive losses, resolving the trade-off between these two critical performance parameters
3Speed
If conventional transistors are used, then device complexity is lower, but switching speed is insufficient for high-frequency applications
Solution Approach 1:
The patent employs parameter changes by utilizing the unique electrical properties of MgxGe1-xO2-x materials, including high electron mobility and controllable carrier concentration through doping. These material parameter optimizations enable faster switching speeds in transistor devices while managing the increased structural complexity through systematic material design rather than complex device architectures
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The use of MgxGe1-xO2-x materials in semiconductor devices results in enhanced electrical breakdown voltage tolerance, reduced on-state electrical losses, increased transistor switching speed, and improved overall switching efficiency, making them suitable for extreme UV applications and high-power electronic devices.
Implementation Method 1
an epitaxial layer of MgxGe1-xO2-x on the substrate
Implementation Method 2
Materials are co-deposited onto the substrate to form the epitaxial layer of MgxGe1-xO2-x
Implementation Method 3
additional elements are incorporated into the MgxGe1-xO2-x crystal to alter the electronic properties, such as the electrical conductivity type
Data Source
AI summary
Various forms of MgxGe1-xO2-x are disclosed, where the MgxGe1-xO2-x are epitaxial layers formed on a substrate comprising a substantially single crystal substrate material. The epitaxial layer of MgxGe1-xO2-x has a crystal symmetry compatible with the substrate material. Semiconductor structures and devices comprising the epitaxial layer of MgxGe1-xO2-x are disclosed, along with methods of making the epitaxial layers and semiconductor structures and devices. Also disclosed is single crystal MgxGe1-xO2-x, with x having a value of 0≤x<1. The single crystal MgxGe1-xO2-x may comprise a dopant chosen from Ga, Al, Li+, N3+. The single crystal MgxGe1-xO2-x may comprise a p-type conductivity.