Three-Layer Micro Connecting Elements for High-Frequency Signal Shielding
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Solution Overview
Problem
High-frequency semiconductor devices face issues with parasitic inductances and capacitances due to bonding wires, leading to signal interference and reduced transmission characteristics, which are not effectively addressed by existing technologies like flip-chip contacts, especially for long signal paths and high-frequency applications.
Innovation Solution
A semiconductor device with micro connecting elements featuring a three-layered structure of conducting, insulating, and conducting materials, forming a waveguide or strip conductor configuration to shield against interference and enable low-loss high-frequency coupling over long distances, using coated wires or strips to minimize parasitic effects.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If bonding wires are used for electrical connections, then the device complexity is reduced and ease of manufacture is improved, but parasitic inductances and capacitances increase leading to signal interference and reduced high-frequency transmission characteristics
Solution Approach 1:
The bonding wire is segmented into multiple sections with alternating conducting and insulating materials, creating a multi-layered structure that divides the single conductive path into multiple controlled segments. This segmentation allows for reduced parasitic effects while maintaining electrical connectivity.
Solution Approach 2:
The bonding wire is constructed as a composite structure with alternating layers of conducting material (e.g., gold, aluminum) and insulating material (e.g., plastic coating, glass). This composite structure enables the wire to maintain electrical conductivity while reducing parasitic inductance and capacitance through the insulating layers.
2Device complexity
If bonding wires are used for electrical connections, then the device structure is simplified, but electromagnetic radiation and antenna effects occur leading to stray signals coupling into the signal flow
Solution Approach 1:
A thin insulating coating or shell is applied to the bonding wire, forming a flexible protective layer that electrically isolates the conductive core from the surrounding environment. This thin film structure reduces electromagnetic radiation and prevents antenna effects while maintaining the wire's flexibility and electrical function.
Solution Approach 2:
The insulating material acts as an intermediary layer between the conducting material and the external environment, mediating the electromagnetic field interactions. This intermediary layer prevents direct coupling of electromagnetic energy to surrounding structures, reducing stray signals and antenna effects.
3Object-affected harmful factors
If flip-chip contacts are used to reduce parasitic inductances, then the inductance is reduced, but the method is not suitable for all circuit designs especially when long electrical signal paths are necessary
Solution Approach 1:
The modified bonding wire structure with alternating conducting and insulating layers serves multiple functions: it provides electrical connectivity like traditional bonding wires, reduces parasitic inductance like flip-chip contacts, and maintains adaptability for both short and long signal paths. This multi-functional structure makes it universally applicable to various circuit designs.
Solution Approach 2:
The structure allows for parameter changes in the bonding wire itself by modifying the thickness, material composition, and layer configuration of the conducting and insulating materials. This enables optimization for different signal path lengths and frequency requirements without changing the fundamental connection method.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution effectively reduces parasitic inductances and capacitances, allowing for reliable high-frequency signal transmission with low losses and reduced susceptibility to external radiation, thereby enhancing the cutoff frequencies and coupling efficiency between semiconductor components.
Implementation Method 1
The micro connecting elements have an at least three-layered structural form with a first layer of conducting material, a second layer of insulating material and a third layer of conducting material. The first and third layers extend along a common center line, shielding one another against interference fields
Implementation Method 2
forming a waveguide or strip conductor configuration to shield against interference and enable low-loss high-frequency coupling over long distances
Data Source
AI summary
A semiconductor device with micro connecting elements and method for producing the same disclosed. In one embodiment, the semiconductor device includes a number of micro connecting elements for the high-frequency coupling of components of the semiconductor device. The micro connecting elements have an at least three-layered structural form with a first layer of conducting material, a second layer of insulating material and a third layer of conducting material. In this configuration, the first and third layers and extend along a common center line and shield one another against electromagnetic interference fields. The first and third layers and are fixed on correspondingly adapted pairs of contact terminal areas of the components.