Micro Detector Floating-Gate Layout for EUV Flare Measurement
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Solution Overview
Problem
Current EUV light lithography systems face challenges such as inadequate source energy, non-uniform photoresist coating, and a lack of suitable detection systems, leading to issues like flare effects and critical dimension loss, which are difficult to detect and quantify using existing optical methods.
Innovation Solution
A micro detector with a substrate, fin structure, floating gate, sensing gate, and energy sensing film is used to generate and measure induced charges, allowing for precise electrical detection of defects and flare effects through a coupling effect and cut-off voltage analysis.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Measurement precision
If optical methods (CSM system or CD-SEM) are used to detect flare effect and critical dimension, then measurement capability is achieved, but equipment complexity increases and measurement speed decreases
Solution Approach 1:
The patent replaces complex optical detection systems (CSM, CD-SEM) with a simple electrical measurement system. The micro detector uses electrical fields to sense defects through induced charge measurement, substituting mechanical/optical components with electrical field-based sensing that achieves comparable precision without the complexity of optical paths, lenses, or electron beam systems.
Solution Approach 2:
The patent extracts the essential measurement function from complex optical systems by isolating the defect detection capability into a simple micro detector structure. Instead of using entire optical microscopy systems, only the critical sensing element (micro detector with floating gate) is retained, removing unnecessary optical components while preserving measurement capability.
2Measurement precision
If optical methods are used to measure defects, then defect detection is possible, but measurement time increases and instant results cannot be obtained
Solution Approach 1:
The patent replaces time-consuming optical scanning and image processing with instantaneous electrical measurement. The micro detector measures defect-induced charges through electrical fields in real-time, eliminating the sequential scanning and complex image analysis required by optical methods, thereby achieving instant measurement results with comparable precision.
3Use of energy by moving object
If EUV light lithography system uses reflective optical components, then light generation is achieved, but critical dimension loss and surface uniformity issues are magnified
Solution Approach 1:
The patent introduces a micro detector as an intermediary measurement tool that indirectly assesses the impact of reflective optical component defects. Instead of directly fixing the complex optical component issues, the micro detector serves as a mediator to detect and quantify the resulting critical dimension variations and surface uniformity problems, enabling process optimization.
4Illumination intensity
If flare effect is present in EUV light lithography, then unwanted scattered light occurs, but defect detection and quantification become difficult
Solution Approach 1:
The patent replaces difficult optical measurement of flare effects with simple electrical measurement. The micro detector uses electrical fields to sense the presence and magnitude of flare effects through induced charges, converting an optically complex measurement problem into a straightforward electrical signal measurement that is easy to detect and quantify.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Enables instant and precise defect measurement, improving the reliability and optimization of EUV light lithography systems by quantifying flare effects and critical dimension uniformity, reducing the complexity of equipment required for defect detection.
Implementation Method 1
An induced charge is generated when the energy sensing film is contacted with an external energy source and the induced charge is stored in the floating gate by a coupling effect
Data Source
AI summary
A micro detector includes a substrate, a fin structure, a floating gate, a sensing gate, a reading gate and an energy sensing film. The fin structure is located on the substrate. The floating gate is located on the substrate, and the floating gate is vertically and crossly arranged with the fin structure. The sensing gate is located at one side of the fin structure. The reading gate is located at the other side of the fin structure. The energy sensing film is located on the sensing gate and is connected with the sensing gate. An induced charge is generated when the energy sensing film is contacted with an external energy source, and the induced charge is stored in the floating gate.