Micro Hole Pattern Formation Using Spacer Etch Barriers
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Solution Overview
Problem
Current semiconductor device patterning technologies face limitations in forming micro hole patterns due to poor line width control and uniformity, especially with the decreasing size of features and critical dimensions, and the inability of current mask patterning technologies to meet the requirements of next-generation semiconductor devices.
Innovation Solution
A method involving the formation of a hard mask layer, pillar patterns, spacer patterns, and etching processes using specific mask layers and gases to create a micro hole pattern, including the use of amorphous carbon, silicon oxynitride, and ultra-low temperature oxide layers, with precise etching and spacer formation to achieve the desired pattern dimensions.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If current mask patterning technology is used, then the patterning process is simple, but the line width control and uniformity are poor
Solution Approach 1:
The patterning process is divided into multiple stages: forming initial mask patterns, depositing spacer layers, selectively removing portions, and repeating the process. This segmentation allows precise control of line width at each stage while achieving the final complex pattern through cumulative steps, resolving the contradiction between precision and complexity
Solution Approach 2:
Spacer layers are formed in advance on the mask patterns before the actual etching occurs. This preliminary action establishes precise geometric boundaries that guide subsequent etching processes, ensuring accurate line width control is achieved before the final pattern formation
2Productivity
If feature size is decreased to increase integration, then device integration increases, but analysis capability of exposure equipment becomes insufficient
Solution Approach 1:
Spacer layers serve as intermediary structures between the mask patterns and the final etched features. These spacers provide well-defined geometric boundaries that are easier to control and measure than direct mask patterns, effectively bridging the gap between limited exposure equipment capability and the need for smaller feature sizes
Solution Approach 2:
The invention transitions from two-dimensional mask pattern definition to three-dimensional spacer structure formation, then back to two-dimensional pattern transfer. This dimensional transition allows precise feature size control through vertical spacer thickness control rather than horizontal mask pattern definition, overcoming exposure equipment limitations
3Manufacturing precision
If double patterning technology is used, then more complex patterns can be formed, but line width of desired dimension is hardly acquired due to limitation in analysis capacity
Solution Approach 1:
The spacer structures are formed to self-align with the underlying mask patterns through conformal deposition. This self-service mechanism automatically ensures proper positioning and spacing without requiring additional alignment measurements or analysis, achieving precise line width control while bypassing analysis capacity limitations
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This method enables the formation of precise micro hole patterns with improved line width control and uniformity, overcoming the limitations of existing technologies by allowing for the creation of complex patterns with enhanced processing margins and accuracy.
Implementation Method 1
etching the third mask layer by using the first photoresist pattern as an etch barrier
Implementation Method 2
forming a spacer layer along a profile of the entire structure including the pillar patterns
Implementation Method 3
forming a spacer layer along a profile of the entire structure including the pillar patterns
Implementation Method 4
etching the hard mask layer by using the spacer patterns as etch barriers
Implementation Method 5
The removal of the first mask pattern may be performed through an oxygen stripping method
Data Source
AI summary
A method for forming a hole pattern includes forming a hard mask layer for a hole pattern over an etch target layer, forming pillar patterns having a gap therebetween over the hard mask layer for a hole pattern, forming spacer patterns on sidewalls of the pillar patterns, removing the pillar patterns between the spacer patterns, and etching the hard mask layer for a hole pattern by using the spacer patterns as etch barriers.