Micro-LED Display Structure Without ACF Bonding
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Solution Overview
Problem
The manufacturing process of micro-LED displays is hindered by the difficulty and low bonding strength of anisotropic conductive film or metal bonding between the micro-LED light-emitting chip and the thin film transistor array substrate, resulting in a low process yield.
Innovation Solution
A display device structure where the light-emitting chip is formed on a support substrate, and a thin film transistor is photolithographically formed on the chip, eliminating the need for anisotropic conductive film or metal bonding, thereby enhancing bonding stability and yield.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Strength
If anisotropic conductive film or metal bonding is used to bond the MLED light-emitting chip to the thin film transistor array substrate, then the bonding process can be performed, but the bonding strength is low and the process yield is low
Solution Approach 1:
The patent merges the bonding process with the thin film transistor fabrication process by forming the electrode and insulating film layers simultaneously using photolithography. This integration eliminates the need for separate bonding steps using anisotropic conductive film or metal bonding, thereby achieving both strong bonding and high process yield through a unified manufacturing approach
2Ease of manufacture
If anisotropic conductive film or metal bonding is used to bond the MLED light-emitting chip to the thin film transistor array substrate, then the bonding process can be performed, but the manufacturing process is difficult
Solution Approach 1:
The patent replaces the mechanical bonding processes (anisotropic conductive film bonding or metal bonding) with a photolithography-based layer formation process. This substitution eliminates the complexity of mechanical bonding operations while achieving reliable electrical and mechanical connection, thereby easing manufacturing difficulty and improving process yield simultaneously
3Reliability
If the thin film transistor is formed on the light-emitting chip using photolithography, then the bonding strength and process yield are improved, but additional manufacturing steps are required
Solution Approach 1:
The patent combines multiple functions into a single integrated process: the photolithography step simultaneously forms the thin film transistor structure and creates the bonding interface between the substrate and light-emitting chip. This merging of functions reduces the total number of discrete manufacturing steps while achieving improved bonding strength and process yield
Data Source
AI summary
A display device and a method for fabricating the same are provided. The display device includes a support substrate, a light-emitting chip, and a thin film transistor. The light-emitting chip is disposed on a side of the support substrate. The thin film transistor is disposed on a side of the light-emitting chip away from the support substrate. The thin film transistor is connected to the light-emitting chip.