Micro LED Array Substrate with Integrated Thin Film Transistor Formation
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Solution Overview
Problem
The manufacturing process of micro LED display devices is complex and costly due to the separate formation and transfer of micro LEDs onto an array substrate, which complicates the integration of thin film transistors and micro LEDs, leading to increased production time and costs.
Innovation Solution
An array substrate is designed with a thin film transistor and micro light-emitting diode (micro LED) configuration where the micro LED is formed on the gate insulating layer of the thin film transistor, allowing simultaneous formation and connection of both components, simplifying the manufacturing process and reducing costs.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If micro LEDs are formed on a separate monocrystalline silicon substrate and then transferred to the array substrate, then the micro LED display device achieves high brightness and fast response, but the manufacturing process becomes complex and costly with increased production time
Solution Approach 1:
The patent merges the formation of thin film transistors and micro LEDs into a single integrated process on the same array substrate. The micro LEDs are formed directly on the gate insulating layer of the thin film transistors, eliminating the need for separate substrate preparation and transfer operations. This integration reduces manufacturing complexity while maintaining display performance.
Solution Approach 2:
The gate insulating layer of the thin film transistor is prepared in advance to serve as the foundation for micro LED formation. By pre-configuring the substrate with the necessary insulating layer and transistor structures, the patent enables direct micro LED fabrication without requiring subsequent transfer operations from separate substrates.
2Reliability
If micro LEDs are formed on a separate monocrystalline silicon substrate and then transferred to the array substrate, then the micro LED display device achieves high brightness and fast response, but production time and manufacturing costs increase
Solution Approach 1:
The patent combines multiple manufacturing steps into a single integrated process. Both thin film transistors and micro LEDs are fabricated simultaneously on the same substrate through coordinated deposition and patterning operations, eliminating the time-consuming transfer process and improving production efficiency.
Solution Approach 2:
The manufacturing process maintains continuous operational flow by forming micro LEDs directly on the gate insulating layer during the same fabrication sequence used for thin film transistor creation. This continuous process eliminates idle transfer operations and maximizes production throughput.
3Reliability
If micro LEDs are formed on a separate monocrystalline silicon substrate and then transferred to the array substrate, then the micro LED display device achieves high brightness and fast response, but manufacturing costs increase
Solution Approach 1:
The patent consolidates the fabrication of thin film transistors and micro LEDs into a single manufacturing process on one substrate. This merger eliminates the need for separate substrate processing, dicing, and transfer operations, significantly reducing manufacturing costs while maintaining device performance.
Solution Approach 2:
The patent extracts and eliminates the unnecessary intermediate step of forming micro LEDs on a separate monocrystalline silicon substrate. By removing this redundant process stage, the patent reduces material waste, processing time, and overall manufacturing costs.
Data Source
AI summary
An array substrate including a base substrate; a thin film transistor disposed on the base substrate, the thin film transistor including a gate electrode connected to a gate line; an active layer; a gate insulating layer insulating the gate electrode from the active layer; a first electrode connected to a data line; and a second electrode spaced apart from the first electrode; a micro light emitting diode disposed on a side of the gate insulating layer away from the base substrate, the micro light emitting diode including a first electrode, a light emitting layer and a second electrode; and a common electrode. The second electrode of the thin film transistor is connected to one of the first and second electrodes of the micro light emitting diode. The other of the first and second electrodes of the micro light emitting diode is connected to the common electrode.