Micro LED Array Bonding and Via Wiring for Transfer Yield
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Solution Overview
Problem
The manufacturing of micro LED display devices is hindered by the time-consuming transfer process of micro LEDs to a substrate and the risk of connection failures between the LEDs and drive circuits, leading to reduced yield and efficiency.
Innovation Solution
A manufacturing method that involves forming a semiconductor layer with a light-emitting layer, bonding it to a substrate with a metal layer, etching to create a light-emitting element and a light-blocking electrode, and forming insulating films and vias to establish electrical connections, thereby reducing the transfer process and improving yield.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If micro LEDs are individually formed and sequentially transferred to a substrate with drive circuit, then connection between micro LED and drive circuit can be achieved, but the transfer process takes significant time and connection failure may occur resulting in low yield
Solution Approach 1:
The patent merges the micro LED formation process with the substrate processing by forming multiple micro LEDs on a single semiconductor layer that is then bonded to the substrate as a whole. This eliminates the need for individual sequential transfer of each micro LED, significantly improving productivity while maintaining connection reliability through the unified bonding process.
Solution Approach 2:
The patent performs preliminary formation of multiple micro LEDs on a semiconductor layer before bonding to the substrate. This preliminary action allows all micro LEDs to be prepared in advance on the semiconductor layer, and then transferred to the substrate in a single bonding operation, eliminating the time-consuming sequential transfer process.
2Manufacturing precision
If individually formed micro LEDs are sequentially transferred to substrate, then each micro LED can be positioned, but the process requires significant time and alignment effort
Solution Approach 1:
The patent combines multiple micro LEDs into a single semiconductor layer structure, allowing them to be transferred and positioned simultaneously in one bonding operation. This merging approach maintains positioning precision through the unified bonding process while eliminating the cumulative time loss from sequential positioning of individual micro LEDs.
3Manufacturing precision
If a large number of micro LEDs are formed for full high definition, 4K, and 8K displays, then image quality advances, but the sequential transfer process becomes increasingly time-consuming
Solution Approach 1:
The patent performs preliminary formation of a large array of micro LEDs on a semiconductor layer before bonding to the substrate. This allows high-definition display requirements to be met by forming many micro LEDs in advance, and then transferring the entire array in a single operation, avoiding the linear increase in transfer time that would result from sequential transfer of each individual micro LED.
Solution Approach 2:
The patent merges hundreds or thousands of micro LEDs into a single semiconductor layer that is bonded to the substrate as one unit. This merging strategy enables high-definition displays with large numbers of micro LEDs to be manufactured efficiently, as the entire array is transferred simultaneously rather than individually, dramatically improving productivity while maintaining the required image quality.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This method enhances the manufacturing efficiency and yield of micro LED display devices by minimizing the transfer process and reducing connection failures, enabling high-quality image display with improved brightness, viewing angle, and low power consumption.
Implementation Method 1
joining the semiconductor layer to a first substrate with a first metal layer interposed therebetween
Implementation Method 2
bonding the semiconductor layer to a first surface of a light-transmitting substrate
Implementation Method 3
etching the semiconductor layer to form, on the first surface, a light-emitting element
Implementation Method 4
etching the first metal layer to form a light-blocking electrode covering the upper surface
Implementation Method 5
forming a first via passing through the first insulating film and the second insulating film. The first via is provided between the first wiring layer and the light-blocking electrode, and allows electrical connection between the first wiring layer and the light-blocking electrode
Data Source
AI summary
An image display device manufacturing method according to an embodiment includes preparing a semiconductor layer, joining the semiconductor layer to a first substrate with a first metal layer interposed therebetween, bonding the semiconductor layer to a light-transmitting substrate, removing the first substrate, etching the semiconductor layer to form a light-emitting element including a light-emitting surface and an upper surface, etching the first metal layer to form a light-blocking electrode covering the upper surface, forming a first insulating film covering the light-emitting element and the light-blocking electrode, forming a circuit element on the first insulating film, forming a second insulating film covering the first insulating film and the circuit element, forming a first via passing through the first insulating film and the second insulating film, and forming a first wiring layer on the second insulating film.