Micro-LED Array Cathode Layout for Larger Emitting Area
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Solution Overview
Problem
Existing semiconductor devices with micro-LEDs face challenges in optimizing the arrangement of cathode contacts, which can obstruct the active area and reduce light emission efficiency.
Innovation Solution
The semiconductor device integrates micro-LEDs in a two-dimensional array with a structured p-doped layer, where some corners of the micro-LEDs lack cathode contacts, allowing electrical connection through a contiguous n-doped layer, thereby minimizing cathode contact area and maximizing the active light-emitting area.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If cathode contacts are provided at all corners of micro-LEDs, then electrical connection reliability is improved, but active light-emitting area is reduced
Solution Approach 1:
The patent extracts the cathode contact from one specific corner of the micro-LED, removing it completely to eliminate the obstruction to the active light-emitting area while maintaining electrical connection through the contiguous n-doped layer
Solution Approach 2:
The patent introduces the contiguous n-doped layer as an intermediary electrical connection path, replacing the traditional corner-based cathode contact structure and enabling current flow through the substrate without requiring a contact at every corner
2Productivity
If cathode contact area is minimized, then light emission efficiency is improved, but electrical connection complexity increases
Solution Approach 1:
The patent merges the electrical connection function into the substrate itself by maintaining the n-doped layer throughout the semiconductor substrate, eliminating the need for separate cathode contact structures at each micro-LED corner and simplifying the overall device architecture
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration enhances the active area and improves light emission efficiency by reducing the number of cathode contacts, leading to improved light generation and stable operation.
Implementation Method 1
The n-doped layer is configured to electrically connect the anode contacts to the cathode contacts
Implementation Method 2
Light-emitting diodes (LEDs) are semiconductor devices that convert an applied voltage into light by encouraging electron-hole recombination events in a semiconductor material
Data Source
AI summary
A semiconductor device is provided. The semiconductor device includes a semiconductor substrate that has an n-doped layer, a p-doped layer, and an active light emitting layer arranged between the n-doped layer and the p-doped layer. The semiconductor device further includes a plurality of micro-LEDs monolithically integrated in the semiconductor substrate. The plurality of micro-LEDs is arranged in a two-dimensional array along a first direction and along a second direction. The plurality of micro-LEDs comprises a first micro-LED that is surrounded by other micro-LEDs of the plurality of micro-LEDs. A corner associated with the first micro-LED does not comprise any cathode contact that is electrically connected to the n-doped layer.