Micro LED Optical Cavity Structure for Pixel Crosstalk Isolation

The patent introduces isolation structures (such as ion-implanted regions or etched grooves) that segment the light emission paths between neighboring pixels. These structures physically divide the light propagation space, preventing light from one pixel from spreading to adjacent pixels, thereby maintaining color purity even at high resolutions with reduced pitch.

The patent employs intermediate layers or structures (such as color conversion layers, quantum dot layers, or optical isolation layers) positioned between the light-emitting active layer and the surrounding environment. These intermediary layers act as optical barriers or filters that confine light within the intended pixel region, preventing cross-contamination of light between neighboring pixels.

The patent merges the driving element manufacturing process with the LED manufacturing process by integrating the formation of electrical connection structures (such as metal interconnect layers, contact holes, and bonding pads) into the same fabrication sequence. This combined approach eliminates separate bonding steps, thereby preventing bonding-related defects and thermal mismatch issues while maintaining manufacturing flexibility through standardized semiconductor fabrication processes.

The patent performs preliminary formation of electrical connection structures and isolation structures during the LED fabrication process before final assembly. By pre-forming contact holes, metal layers, and bonding interfaces with proper alignment and electrical properties, the patent ensures stable electrical connections are established before the devices are fully assembled and operated, preventing connection defects.

The patent extracts the light isolation function from the traditional mesa structure by removing the need for deep lateral etching and complex side-wall formation. Instead, the patent uses planar or minimally structured isolation approaches where isolation structures are formed as simple surface-level features or embedded layers that provide sufficient optical isolation without requiring the full three-dimensional mesa geometry, thereby reducing manufacturing complexity.

The patent applies local quality by providing isolation structures only in specific regions where light emission control is needed, rather than forming complete mesa structures around entire active layers. The isolation is implemented locally at critical interfaces or boundaries using ion implantation, thin film deposition, or shallow etching, maintaining sufficient light isolation while minimizing additional manufacturing steps and structural complexity.