Integrated Color Micro LED Structure for Optical Crosstalk Isolation
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Integrated Micro LED displays suffer from optical crosstalk issues due to the lack of segmentation and common N-type gallium nitride design, affecting display quality.
Innovation Solution
A fabrication method involving a black adhesive layer to cover and etch the Micro LED chip, isolating N-type gallium nitride layers, and using a transparent conductive layer to connect with a driving substrate, combined with a light color conversion module to avoid optical crosstalk.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Device complexity
If integrated Micro LED pixels are integrated on a base without segmentation, then manufacturing complexity is reduced, but optical crosstalk between adjacent pixels occurs
Solution Approach 1:
The patent introduces a black adhesive layer as an intermediary substance between adjacent Micro LED pixels. This layer acts as an optical barrier that blocks light from adjacent pixels, preventing optical crosstalk while maintaining the integrated structure on the base. The black adhesive layer is applied to the side of the integrated Micro LED chip away from the base layer, creating isolation between pixels without requiring segmentation.
2Ease of manufacture
If common N-type gallium nitride material is used for all pixels, then manufacturing process is simplified, but optical crosstalk inside the N-type material occurs
Solution Approach 1:
The patent applies segmentation by etching the common N-type gallium nitride material to create isolated regions for each pixel. Specifically, the N-type gallium nitride layers are etched and isolated between adjacent pixels, dividing the continuous material into discrete segments. This maintains the ease of using common N-type material for manufacturing while preventing optical crosstalk by physically separating the light paths through etching.
3Stability of the object's composition
If base layer is retained for support, then structural stability is maintained, but optical crosstalk on the base layer occurs
Solution Approach 1:
The patent removes the base layer after the Micro LED chips have been integrated and the black adhesive layer has been applied. The base layer is stripped away, leaving the integrated Micro LED chip structure suspended or supported by the bonding substrate. This extraction of the base layer eliminates the source of optical crosstalk on the base layer while the previously applied black adhesive layer continues to provide structural support and optical isolation.
4Adaptability or versatility
If QD color conversion module is stacked on GaN LED chip matrix, then color conversion is achieved, but optical crosstalk among QD and in gaps occurs
Solution Approach 1:
The patent introduces an insulating colloid as an intermediary material filled in the gaps between the Micro LED chip module and the driving substrate, and between adjacent pixels. This insulating colloid acts as an optical barrier that prevents light from leaking through the gaps, thereby eliminating optical crosstalk in the gap regions while maintaining the stacked QD color conversion module structure for color conversion functionality.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The method effectively prevents optical crosstalk between gallium nitride Mesas and within the N-type material, ensuring improved display quality by isolating N-type layers and using a reflective layer to manage light emission.
Implementation Method 1
covering a side, away from a base layer, of an integrated Micro LED chip with a common N electrode with a black adhesive layer
Implementation Method 2
connecting all the N-type gallium nitride layers of the second Micro LED chip module with an N electrode of the driving substrate by using a transparent conductive layer
Data Source
Figure 1
Figure 2~4
Figure 5~7
AI summary
The present invention discloses a fabrication method for a crosstalk-proof structure of an integrated colored Micro LED. A side, away from a base layer, of an integrated Micro LED chip with a common N electrode is covered with a black adhesive layer, the black adhesive layer is etched, and electrodes of the Micro LED chip are exposed, so that optical crosstalk between gallium nitride Mesas can be avoided; and a base layer is stripped, and N-type gallium nitride layers of a first Micro LED chip module are isolated, so that the N-type gallium nitride layers can be isolated by the black adhesive layer to avoid optical crosstalk inside an N-type gallium nitride material of a common N-type chip and optical crosstalk of the base part. In such a way, the problem of optical crosstalk on an LED light emitting optical path can be avoided.