Micro LED Chip Reflective Sidewalls for Color Crosstalk Control
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Micro Light-Emitting Diode (Micro LED) displays face issues with color crosstalk due to the small spacing between micro LEDs, affecting display quality and user experience.
Innovation Solution
A micro light-emitting diode chip design that includes a substrate with light-emitting units featuring a first and second semiconductor layer stacked in sequence, a reflective sidewall, and a blocking portion, such as a photonic crystal or Distributed Bragg Reflector, to prevent light crosstalk by reflecting and modulating the light emission angle, ensuring collimated light emission.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If micro LEDs are arranged with small spacing to increase display resolution, then display resolution is improved, but color crosstalk between adjacent micro LEDs occurs
Solution Approach 1:
The patent introduces a blocking portion as an intermediary structure positioned between adjacent light-emitting units. This blocking portion acts as a mediator that prevents light from one unit from interfering with adjacent units, thereby eliminating color crosstalk while maintaining high display resolution through close spacing of micro LEDs.
Solution Approach 2:
The patent adds a vertical dimension solution by placing the blocking portion between the substrate and the active layer of adjacent light-emitting units. Instead of horizontally separating units, the solution extends into the vertical space, using the blocking portion to modulate light paths in the z-direction to prevent crosstalk while maintaining horizontal compactness.
2Object-generated harmful factors
If blocking portions are added between light-emitting units to prevent color crosstalk, then color crosstalk is reduced, but device complexity increases
Solution Approach 1:
The patent merges the blocking portion with existing structural elements of the light-emitting units. The blocking portion is integrated into the overall device architecture, combining multiple functions into unified structures, which reduces the number of separate components and simplifies the manufacturing process despite adding functionality to prevent crosstalk.
Solution Approach 2:
The blocking portion serves multiple functions simultaneously: it blocks light to prevent crosstalk, maintains structural integrity of the device, and can be formed using the same material layers as other components. This multi-functionality reduces the need for additional specialized components, thereby limiting the increase in device complexity.
3Illumination intensity
If reflective sidewalls are used to modulate light emission angle, then light emission direction is improved, but manufacturing complexity increases
Solution Approach 1:
The reflective sidewalls are formed during the initial growth process of the light-emitting units using epitaxial techniques. By pre-forming the reflective structures as part of the standard fabrication sequence, the patent avoids additional post-processing steps that would increase manufacturing complexity, while still achieving the desired light emission angle modulation.
Solution Approach 2:
The patent replaces mechanical or post-fabrication methods for creating reflective surfaces with a chemical epitaxial growth process. The reflective sidewalls are formed in-situ during semiconductor layer growth, substituting complex mechanical machining or coating operations with a more integrated and controllable chemical vapor deposition or molecular beam epitaxy process.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution effectively reduces color crosstalk and improves brightness, leading to enhanced display effects by ensuring that light is emitted in a direction away from the substrate, thereby improving the overall display quality.
Implementation Method 1
a reflective sidewall, which constitutes a sidewall of the active layer, the second semiconductor layer and at least a part of the first semiconductor layer
Implementation Method 2
the blocking portion is a photonic crystal
Implementation Method 3
at least a part of the blocking portion is located between first semiconductor layers of two of the light-emitting units
Implementation Method 4
the reflective sidewall is a distributed Bragg reflector
Data Source
AI summary
Disclosed are a micro light-emitting diode chip, a manufacturing method therefor, and an electronic device. The micro light-emitting diode chip includes: a substrate; a plurality of light-emitting units, where a light-emitting unit is located on a side of the substrate, the light-emitting unit includes a first semiconductor layer, an active layer and a second semiconductor layer stacked in sequence, the first semiconductor layer is located on a side, away from the substrate, of the second semiconductor layer, and the light-emitting unit further includes a reflective sidewall, which constitutes a sidewall of the active layer, the second semiconductor layer and at least a part of the first semiconductor layer; and a blocking portion, where at least a part of the blocking portion is located between first semiconductor layers of two of the light-emitting units.