Micro LED Mesa Layout for Current Spreading and Red-Shift Control

The patent applies local quality by creating an asymmetric mesa structure where the second semiconductor layer has a larger top surface area than the first semiconductor layer. This localized geometric modification allows carriers to be confined within the expanded area of the second layer, providing carrier isolation without requiring spacing between adjacent micro LEDs. The non-uniform area distribution resolves the contradiction by maintaining both carrier isolation and maximizing active light emitting area.

The patent uses local quality by modifying the mesa structure to have an asymmetric area distribution between the first and second semiconductor layers. The second layer's larger top surface area creates a localized carrier confinement zone that prevents carrier spreading to adjacent mesas, even when mesas are placed in close proximity. This resolves the contradiction by maintaining both large active area and high light emitting efficiency through structural design rather than spacing.

The patent applies merging by integrating the ion implantation region directly into the semiconductor layer structure during the epitaxial growth process. The ion implantation region is formed as an inherent part of the second semiconductor layer, combining the light emitting function and current management function in a single integrated structure. This resolves the contradiction by achieving optimized current injection without adding separate complex components or structures.