Micro LED Pixel Structure With Depletion Regions Against Crosstalk

The micro LED array is divided into individual micro LED structures with distinct boundaries. Each micro LED is isolated from adjacent ones through precise patterning and etching processes, creating discrete light-emitting units that maintain individual performance characteristics while achieving high pixel density in the array configuration

The patent modifies material composition and structural parameters of the micro LED to compensate for size reduction effects. This includes optimizing the thickness and composition of active regions, adjusting doping concentrations, and modifying quantum well structures to maintain efficient carrier injection and reduce surface recombination losses in sub-micrometer scale devices

Protective layers and passivation structures are formed on the micro LED surfaces before the etching process to prevent damage and reduce surface state formation. The etching process itself is designed with preliminary parameters optimization to minimize surface recombination centers while achieving the required dimensional precision for high pixel density

The etching process parameters are optimized to balance between achieving sufficient size reduction for high pixel density and minimizing surface damage. This includes controlling etch depth, etch rate, and etch profile to maintain structural integrity and electrical performance while reducing micro LED dimensions

The isolation function is extracted from traditional bulky isolation structures and implemented through the micro LED array design itself. The pixel definition and current confinement are achieved through the active region geometry and electrode patterning, eliminating the need for separate isolation structures and reducing overall device volume while preventing crosstalk

Instead of using vertical isolation structures that increase volume, the patent implements isolation in the lateral dimension through precise patterning and current confinement structures. The isolation is achieved through in-plane device geometry and electrical field confinement rather than out-of-plane structural additions

The light isolation function is extracted from vertical isolation structures and implemented through optical confinement in the active region. The waveguide structure and total internal reflection at interfaces are utilized to confine light laterally, achieving effective light isolation without requiring high vertical isolation structures that would increase device volume

Mechanical isolation structures are replaced with optical confinement mechanisms. The light propagation is controlled through refractive index differences and waveguide effects inherent in the micro LED structure, eliminating the need for physical isolation barriers and reducing device volume while maintaining effective light isolation between adjacent pixels

The micro LED structure components serve multiple functions simultaneously. The contact structures and electrode patterns are designed to provide both electrical connection and optical management functions. The device geometry itself is optimized to provide directional emission through light extraction enhancement at specific interfaces, eliminating the need for separate reflective structures and reducing manufacturing complexity

The micro LED structure utilizes its own geometric and material properties to achieve directional emission. The refractive index differences between layers, the shape of the active region, and the interface geometry naturally guide light extraction in preferred directions without requiring external reflective components. The structure serves its own optical management needs through its inherent design