Micro-LED Display Structure for High-Resolution Wafer-Level Assembly
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Solution Overview
Problem
The manufacturing of display devices using micro LEDs is time-consuming and costly due to the labor-intensive pick-and-place method for mounting individual LEDs, which increases with higher pixel counts and resolution, making it difficult to achieve high-resolution, low-power, and cost-effective displays.
Innovation Solution
A display device structure featuring a substrate with transistors and light-emitting diodes in a matrix configuration, where the LEDs are positioned closer to the substrate and emit light towards it, allowing for simultaneous attachment of transistors and LEDs, reducing manufacturing time and complexity, and incorporating a metal oxide layer for low power consumption.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If the pick-and-place method is used to mount individual LEDs, then the display device can be manufactured with conventional processes, but the manufacturing time and cost increase significantly
Solution Approach 1:
The patent merges the LED mounting process with the transistor fabrication process by forming both components simultaneously on the same substrate using the same semiconductor manufacturing steps. This eliminates the separate pick-and-place mounting step, resolving the contradiction between manufacturing simplicity and production speed.
Solution Approach 2:
The patent performs preliminary actions by pre-forming both the LED structures and transistor structures on the substrate during the same fabrication sequence. The LED active regions, electrodes, and transistor channels, gates, and contacts are all created in advance through integrated processing steps before final assembly, eliminating time-consuming post-fabrication mounting operations.
2Manufacturing precision
If the number of pixels and resolution are increased, then the display quality is improved, but the manufacturing complexity and time increase
Solution Approach 1:
The patent segments the display into a matrix of pixel regions, where each pixel contains integrated LED and transistor structures. This segmentation allows high-resolution displays to be manufactured using standardized, repeatable fabrication processes applied across all pixels simultaneously, rather than individually assembling each component, thus managing manufacturing complexity while achieving high resolution.
Solution Approach 2:
The patent changes the fabrication parameters by using standard semiconductor manufacturing techniques (such as photolithography, sputtering, and chemical vapor deposition) with adjusted dimensions and material layers to create both LED and transistor structures. This allows high-resolution displays to be manufactured with controlled precision through well-established process parameters rather than complex assembly operations.
3Manufacturing precision
If individual LEDs are mounted one by one, then each LED can be precisely positioned, but the manufacturing cost and time increase
Solution Approach 1:
The patent merges LED formation with transistor fabrication by creating both structures simultaneously on the substrate using integrated semiconductor processing. This eliminates the time-consuming individual mounting process while maintaining precise positioning through controlled fabrication steps that define both component locations and interconnections in a single manufacturing sequence.
Data Source
AI summary
A display device with high resolution is provided. A display device with high display quality is provided. The display device includes a substrate, an insulating layer, a plurality of transistors, and a plurality of light-emitting diodes. The plurality of light-emitting diodes are provided in a matrix over the substrate. Each of the plurality of transistors is electrically connected to at least one of the plurality of light-emitting diodes. The plurality of light-emitting diodes are positioned closer to the substrate than the plurality of transistors are. The plurality of light-emitting diodes emit light toward the substrate. Each of the plurality of transistors includes a metal oxide layer and a gate electrode. The metal oxide layer includes a channel formation region. The top surface of the gate electrode is substantially level with the top surface of the insulating layer.