Micro LED Display Panel Asymmetric Semiconductor Layers
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Solution Overview
Problem
Micro LED chips experience decreased light efficiency due to total reflection at the smooth surface of the P-type semiconductor, which is exacerbated by roughening the surface to reduce reflection, leading to poor crystal quality and increased leakage current.
Innovation Solution
A display panel design where the N-type semiconductor is thicker than the P-type semiconductor and has a rough surface opposite to the P-type semiconductor, with a passivation layer and organic layer configuration to reduce total reflection and prevent crystal quality degradation, while maintaining high light efficiency.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Loss of energy
If the P type semiconductor surface is roughened to decrease total reflection and increase light efficiency, then light efficiency is improved, but crystal quality deteriorates and leakage current increases
Solution Approach 1:
The patent applies asymmetry by making the N type semiconductor layer thicker than the P type semiconductor layer (thickness ratio of 2:1 to 10:1). This asymmetric thickness distribution allows the rough surface to be formed on the thicker N type layer where it does not compromise crystal quality, while the thinner P type layer maintains good crystal structure to prevent leakage current.
Solution Approach 2:
Instead of roughening the P type semiconductor surface as conventionally done, the patent inverts the approach by roughening the N type semiconductor surface. This reversal allows the rough surface to be positioned where it does not harm crystal quality, while still achieving the goal of reducing total reflection and improving light efficiency.
2Reliability
If the P type semiconductor surface is kept smooth, then crystal quality is maintained, but total reflection causes light to re-enter the light emitting layer and convert to heat, decreasing light efficiency
Solution Approach 1:
The patent introduces an intermediary solution by forming a rough surface on the N type semiconductor layer that acts as a mediator between the light emitting layer and the external environment. This rough surface reduces total reflection without requiring the P type semiconductor surface to be roughened, thus maintaining crystal quality while improving light efficiency.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution effectively increases light efficiency without increasing leakage current by ensuring the N-type semiconductor's rough surface does not affect its crystal quality, thereby enhancing the performance of Micro LED chips.
Implementation Method 1
as the light outgoing surface of the P type semiconductor is smooth, the total reflection causes a portion of the light to re-enter the light emitting layer to be converted into heat
Data Source
AI summary
The present invention provides a display panel and a manufacturing method thereof. The display panel comprises a micro light emitting diode and a thin film transistor electrically coupled to the micro light emitting diode. The micro light emitting diode comprises a P type semiconductor and a N type semiconductor. The P type semiconductor is close to the thin film transistor and the N type semiconductor is configured at one side of the P type semiconductor away from the thin film transistor. One surface of the N type semiconductor away from the P type semiconductor is roughened by a plasma surface treatment process. Since a thickness of the N type semiconductor is larger than a thickness of the P type semiconductor, the crystal quality of material of the N type semiconductor will not be affected as the N type semiconductor is roughened to increase the light efficiency.