Micro LED Display Device With Thin Gate Insulator
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Solution Overview
Problem
Micro light-emitting diode driving circuits face challenges in reducing power consumption due to high threshold voltages and current leakage, which affects the efficiency and brightness of micro light-emitting diodes.
Innovation Solution
A micro light-emitting diode display device with a driving transistor featuring a gate insulator thickness of less than or equal to 500 angstroms and a micro light-emitting diode with a current injection channel and an active layer portion in contact with the channel, reducing the light-emitting area and avoiding surface recombination, thereby lowering the voltage required to activate the diode.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Use of energy by moving object
If conventional gate insulator thickness is used, then manufacturing is easier, but power consumption increases due to high threshold voltage
Solution Approach 1:
The patent applies parameter changes by reducing the gate insulator thickness from conventional values (typically >1000 Å) to 500 Å or less. This parameter modification directly lowers the threshold voltage of the driving transistor, enabling reduced power consumption in the micro light-emitting diode display device while maintaining manufacturability through established thin-film deposition techniques.
2Loss of energy
If conventional light-emitting area is used, then brightness is sufficient, but current leakage increases
Solution Approach 1:
The patent applies local quality by introducing a current injection channel structure that concentrates current flow in specific localized regions within the micro light-emitting diode. This creates non-uniform current distribution where high current density is confined to the channel region, reducing overall current leakage while maintaining adequate brightness through focused light emission from the active layer.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution achieves a significant reduction in power consumption, allowing for a low power micro light-emitting diode display device and driving circuit with reduced voltage requirements, enhancing efficiency and brightness while minimizing current leakage.
Implementation Method 1
The gate insulator has a thickness less than or equal to about 500 angstroms and is on the gate and the substrate
Implementation Method 2
A current injection channel is extended within one of the first type semiconductor layer and the second type semiconductor layer and is spaced apart from a side surface of the micro light-emitting diode
Implementation Method 3
The micro light-emitting diode has a lateral length less than or equal to about 50 μm and is electrically connected to one of the source electrode and the drain electrode
Implementation Method 4
The micro light-emitting diode includes a first type semiconductor layer, an active layer, and a second type semiconductor layer
Data Source
AI summary
A micro light-emitting diode display device including a driving transistor and a micro light-emitting diode is provided. The driving transistor includes a substrate, a gate, a gate insulator, a semiconductor layer, a drain electrode, and a source electrode. The gate insulator has a thickness less than or equal to about 500 angstroms. The micro light-emitting diode has a lateral length less than or equal to about 50 μm and is electrically connected to one of the source electrode and the drain electrode. A current injection channel is extended within one of a first type semiconductor layer and a second type semiconductor layer of the micro light-emitting diode and is spaced apart from a side surface of the micro light-emitting diode. A lateral length a light-emitting portion of an active layer of the micro light-emitting diode is less than or equal to about 10 μm.