Micro LED Structure with Distinctive Regions for Full-Color Display
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Existing micro LED displays face challenges in commercialization due to the complexity and low yield of manufacturing full-color displays, as each LED structure needs to emit red, green, and blue lights, requiring a transferring process that is difficult and prone to errors, especially when forming light emitting layers on a single substrate.
Innovation Solution
A micro LED structure with three-dimensional light emitting structures grown concurrently on a single substrate, featuring distinct regions that can emit different wavelengths of light, allowing for independent electrical control and varying in size, height, and center-to-center distance, enabling the formation of red, green, and blue light emitting regions without the need for a transferring process.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Adaptability or versatility
If LED structures emitting different colors are formed on separate substrates and then transferred, then full-color display capability is achieved, but the manufacturing process complexity increases and yield decreases
Solution Approach 1:
The patent merges multiple LED structures emitting different colors (red, green, blue) onto a single substrate, eliminating the need for separate substrate fabrication and transfer processes. This integration approach directly reduces manufacturing complexity while maintaining full-color display capability.
Solution Approach 2:
The patent segments the active layer into multiple quantum well structures with different indium gallium nitride compositions, where each segment emits a different color. This segmentation within a single unified structure allows full-color emission without requiring multiple separate substrates or transfer operations.
2Adaptability or versatility
If LED structures emitting different colors are formed on separate substrates and then transferred, then full-color display capability is achieved, but manufacturing yield decreases due to the minute and precise transferring process
Solution Approach 1:
By combining all color-emitting LED structures on a single substrate from the outset, the patent eliminates the transfer process entirely. This approach prevents yield loss associated with precise alignment and transfer operations while achieving full-color display functionality.
3Ease of manufacture
If a single substrate is used to form all light emitting structures, then manufacturing process is simplified, but controlling different wavelengths and colors becomes more difficult
Solution Approach 1:
The patent applies local quality by varying the indium gallium nitride composition in different regions of the active layer. Each local region has a specific composition tailored to emit a particular wavelength, enabling precise color control within the unified single-substrate structure.
Solution Approach 2:
The patent changes the compositional parameters of the indium gallium nitride material in different segments of the active layer. By adjusting the indium and gallium ratios in each segment, precise control over emission wavelengths is achieved while maintaining the simplicity of a single-substrate manufacturing process.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach simplifies the manufacturing process, reduces costs, and enables the production of high-quality full-color micro displays by growing all light emitting structures in a one-step process on a single substrate, improving the yield and precision of color micro displays.
Implementation Method 1
the light emitting structure layer may form at least three distinctive regions each including a single light emitting structure or a plurality of light emitting structures, the distinctive regions configured to emit light of at least two different wavelengths
Data Source
AI summary
Provided is a micro light emitting diode (LED) structure including an n-type semiconductor substrate layer, a light emitting structure layer formed on the n-type semiconductor substrate layer, and a p-type semiconductor layer formed on the light emitting structure layer, wherein the light emitting structure layer includes an arrangement of light emitting structures in which active layers including In and Ga are formed on tops thereof, wherein the light emitting structure layer forms at least three distinctive regions each including a single light emitting structure or a plurality of light emitting structures, the distinctive regions configured to emit light of at least two different wavelengths, the distinctive regions are controllable to emit light individually, and the distinctive regions are different in at least one of sizes of base faces, heights, and center-to-center distances of the lighting emitting structures of the regions.