Micro LED Self-Assembly Electrode Layout Around Thin Film Transistors

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Solution Overview

Problem

Existing display technologies such as LCD and OLED face issues like slow response time, low efficiency, and poor mass production yield, while micro LED displays face challenges in transferring millions of semiconductor light emitting devices for large displays due to low transfer success rates and high costs.

Innovation Solution

A display device with a self-assembly method that includes a base part, semiconductor light emitting devices, thin film transistors, and assembly electrodes, where the electrodes are designed not to overlap the transistors, allowing for high assembly rates and preventing performance degradation.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Manufacturing precision

If assembly electrodes are added to enable self-assembly of semiconductor light emitting devices, then assembly rate and positioning precision are improved, but device complexity increases due to additional electrode structures

Engineering Contradiction:
Improveassembly rateVSAvoiddevice complexity
Core Design Contradiction:
Manufacturing precisionVSDevice complexity

Solution Approach 1:

The assembly electrode is segmented into multiple regions with different potentials (first potential region and second potential region) to create localized electric fields that guide semiconductor light emitting devices to specific positions. This segmentation enables precise positioning without requiring a complete electrode coverage, thus improving assembly precision while controlling complexity.

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

Different regions of the assembly electrode are assigned different electrical potentials to create localized assembly zones. The first potential region and second potential region have distinct electric field characteristics that enable selective assembly at different locations, improving positioning precision without uniformly increasing the entire electrode structure's complexity.

Inventive Principle:
Principle #3Local quality

2Productivity

If assembly electrodes extend across the entire base part to improve assembly coverage, then assembly rate increases, but resistance increases affecting transistor performance

Engineering Contradiction:
Improveassembly rateVSAvoidtransistor performance
Core Design Contradiction:
ProductivityVSReliability

Solution Approach 1:

The assembly electrode is divided into multiple potential regions rather than forming a continuous conductive path. This segmentation allows the electrode to provide assembly functionality across the base part while interrupting continuous current flow, thereby reducing overall resistance and preventing degradation of transistor performance connected to the base part.

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

Insulating layers are introduced as intermediary elements between different potential regions of the assembly electrode. These insulating layers electrically isolate the potential regions, preventing current leakage and resistance buildup while still allowing the electrode structure to span across the base part for comprehensive assembly coverage.

Inventive Principle:
Principle #24Intermediary (Mediator)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The self-assembly method enables direct assembly of semiconductor light emitting devices on a display substrate with thin film transistors, maintaining transistor performance and achieving high assembly rates without increasing resistance.

Implementation Method 1

assembly electrodes extending along one direction on the base part and to which a voltage is applied to settle the semiconductor light emitting device at a pre-set position on the first region

Methodology Applied
Scientific EffectElectrostatic force: Electrostatics

Data Source

PatentUS12446314B2Display device using semiconductor light emitting device
Publication Date: 2025.10.14 LG ELECTRONICS INC
  • US12446314B2 patent drawing
  • US12446314B2 patent drawing
  • US12446314B2 patent drawing

AI summary

A display device can include a base part, a semiconductor light emitting device disposed on a first region of the base part, and a plurality of assembly electrodes extending along one direction on the base part and to which a voltage is applied to dispose the semiconductor light emitting device at a pre-set position on the first region. The plurality of assembly electrodes are disposed not to overlap a thin film transistor.