Micro-LED Epitaxial Structure With Fewer Transfer Steps
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Solution Overview
Problem
The existing manufacturing processes for Micro-LEDs require multiple transfers, which lead to a decrease in yield and an increase in production costs.
Innovation Solution
A method of manufacturing a semiconductor device that involves forming a first conductive layer with a heavily-doped group III-V compound on a substrate, creating an isolation structure, and growing a light-emitting structure using the isolation structure as a mask. This process reduces the need for multiple transfers by integrating the electrodes and light-emitting structure directly on the substrate.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If multiple transfers are used in the manufacturing process, then the Micro-LED can be transferred to the drive circuit board, but the yield decreases and production costs increase
Solution Approach 1:
The patent combines the substrate, electrodes, and light-emitting structure into a single integrated device. The electrodes are formed directly on the substrate before growing the light-emitting structure, eliminating the need for separate transfer steps to temporary carrier plates and final mounting to drive circuit boards. This merging of components into one monolithic structure directly reduces the number of transfers and improves yield rate.
2Ease of manufacture
If multiple transfers are performed, then the Micro-LED can be positioned on the drive circuit board, but production costs increase
Solution Approach 1:
The electrodes are formed on the substrate in advance, before the light-emitting structure is grown. This preliminary formation of electrodes eliminates the need for subsequent transfer and re-positioning operations. The isolation structure is also formed early in the process using the mask technique, further reducing later manufacturing steps and costs.
3Reliability
If multiple transfers are used, then the Micro-LED can be assembled, but the risk of contamination increases
Solution Approach 1:
By merging all critical components (substrate, electrodes, light-emitting structure) into a single integrated device formed in one manufacturing process, the patent eliminates multiple handling and transfer operations. Each transfer step represents a potential contamination event; by removing these steps through integration, the contamination risk is significantly reduced.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The proposed method reduces the number of transfers, thereby improving yield and reducing production costs while minimizing the risk of contamination from multiple handling steps.
Implementation Method 1
forming a first conductive layer on a substrate, where the first conductive layer includes a heavily-doped group III-V compound
Implementation Method 2
growing a light-emitting structure by using the isolation structure as a mask; where the light-emitting structure includes a first semiconductor layer, an active layer and a second semiconductor layer which are sequentially stacked on the first conductive layer
Data Source
AI summary
The present application provides a semiconductor device and a manufacturing method thereof. The manufacturing method of the semiconductor device includes: first forming a first conductive layer on a substrate, where the first conductive layer includes a heavily-doped group III-V compound, then forming an isolation structure on the first conductive layer, then growing a light-emitting structure by using the isolation structure as a mask, where the light-emitting structure includes a first semiconductor layer, an active layer and a second semiconductor layer which are sequentially stacked on the first conductive layer, and a conductivity type of the first semiconductor layer is opposite to a conductivity type of the second semiconductor layer.