Micro-LED Field Shielding Structure for Bottom Gate Isolation
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Solution Overview
Problem
Ultra-high pixel per inch (ppi) micro-LED displays face challenges with the bottom gate effect, where the field applied to micro-LEDs affects the switching device, leading to potential malfunction and reduced operation reliability.
Innovation Solution
Incorporating a field shielding member between the micro-LEDs and the switching device, which includes a reflective layer to reflect light and a metal layer for voltage application, effectively shielding the switching device from the field applied by the micro-LEDs during operation.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Device complexity
If micro-LEDs and switching device are formed as a single body in ultra-high ppi display, then device integration is improved, but the switching device is affected by the field from micro-LEDs causing bottom gate effect
Solution Approach 1:
A field shielding member is introduced as an intermediary element positioned between the micro-LED and the switching device. This member includes a reflective layer and a metal layer that does not directly contact the micro-LED, creating a physical barrier that blocks the electric field from reaching the switching device while maintaining the integrated single-body structure.
Solution Approach 2:
The field shielding member is segmented into distinct functional layers: a reflective layer for optical reflection and a metal layer for electrical field shielding. The metal layer is further segmented to not directly contact the micro-LED, creating isolated regions that prevent field coupling while maintaining structural integration.
2Reliability
If field shielding member is added between micro-LED and switching device, then bottom gate effect is blocked, but device structure becomes more complex
Solution Approach 1:
The field shielding member is designed to perform multiple functions simultaneously: the reflective layer reflects light from the micro-LED, the metal layer provides electrical field shielding, and the overall structure serves as part of the integrated device architecture. This multi-functionality reduces the need for separate components.
Solution Approach 2:
The reflective layer and metal layer are merged into a single field shielding member structure that is integrated with the existing device layers. The metal layer is positioned to work in conjunction with the reflective layer, combining optical and electrical shielding functions in one integrated component rather than separate elements.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The field shielding member prevents the field from the micro-LEDs from reaching the switching device, thereby blocking the bottom gate effect and enhancing the operational reliability of the ultra-high ppi micro-LED display.
Implementation Method 1
The field shielding member may include a reflective layer configured to reflect light emitted from the plurality of micro-LEDs
Data Source
AI summary
An ultra-high pixel per inch (ppi) micro-light-emitting diode (LED) display includes a micro-LED layer including a plurality of micro-LEDs, a backplane layer including a switching device connected to the micro-LED layer, and a field shielding member provided between the plurality of micro-LEDs and the switching device, the field shielding member configured to shield the switching device from a field applied to the switching device from the plurality of micro-LEDs during an operation of the micro-LED display, where the micro-LED layer and the backplane layer form a single body in a sequentially stacked structure.