Micro LED Mesa Structure With Ion Isolation for Crosstalk Control

The patent introduces an ion implantation region as an intermediary zone between the semiconductor region and adjacent structures. This region has modified electrical properties through ion implantation that creates a potential barrier, effectively blocking carrier diffusion while occupying minimal space. The intermediary layer prevents direct carrier spreading to adjacent mesas without requiring large spacing, thus resolving the contradiction between carrier isolation and active area maintenance.

The ion implantation region serves as a spatial intermediary that enables close positioning of adjacent mesas while preventing carrier diffusion. By modifying the electrical properties of the semiconductor material through ion implantation, a potential barrier is created that blocks carrier spreading without requiring physical separation. This allows maximum active area utilization while maintaining light emitting efficiency through effective carrier confinement.

The patent introduces a sidewall protective layer as an intermediary structure that covers the quantum well sidewalls. This protective layer prevents direct exposure of the sidewalls to the environment, eliminating the need for complex etching processes to achieve smooth sidewalls. The protective layer acts as a barrier that prevents nonradiative recombination at the sidewall interface, thereby maintaining high quantum efficiency while simplifying the manufacturing process.

The patent modifies the electrical parameters of the semiconductor region through ion implantation, changing the resistance characteristics in specific zones. This parameter modification creates a more favorable current distribution profile that allows high brightness operation without the adverse effects of excessive current density. The ion implantation region adjusts the local electrical properties to prevent carrier accumulation that causes red-shift, thereby maintaining emission quality at high brightness levels.