Micro-LED Layer Stacking for Full-Color Pixel Integration
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Solution Overview
Problem
The integration of multiple sub-pixels emitting different colors to form a full color pixel in micro-LED displays is challenging due to the differences in manufacturing processes and materials, especially when the micro-LED mesas become smaller, making mass transfer of micro-LEDs on the same platform nearly impossible for high-resolution micro-displays.
Innovation Solution
A full color LED structure is developed with a substrate and multiple LED units, where each unit includes semiconductor layers and a color conversion layer, allowing for the integration of sub-pixels emitting different colors on the same platform without mass transfer. The LED units are electrically isolated using ion-implanted materials, and a color conversion layer converts light to achieve a range of colors, enabling the formation of a full color pixel.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Adaptability or versatility
If multiple sub-pixels emitting different colors are integrated on the same platform using mass transfer method, then full color display capability is achieved, but manufacturing difficulty increases significantly and becomes nearly impossible for high resolution micro-displays when micro-LED mesas become smaller
Solution Approach 1:
The patent segments the micro-LED structure into multiple semiconductor layers, with each layer containing LED units that emit different colors. This allows different colored LEDs to be fabricated separately in their respective layers and then integrated vertically, avoiding the need for complex mass transfer methods while achieving full color display capability.
Solution Approach 2:
The patent transitions from horizontal integration (mass transfer of micro-LEDs on the same plane) to vertical integration (stacking semiconductor layers above each other). This dimensional change from 2D to 3D architecture enables full color integration without the manufacturing difficulties associated with mass transfer methods.
2Adaptability or versatility
If multiple sub-pixels are integrated on the same platform, then color range is improved, but device complexity increases due to different manufacturing processes and materials
Solution Approach 1:
The patent divides the multi-color LED structure into separate semiconductor layers, where each layer is dedicated to producing LEDs of a specific color. This segmentation allows each layer to be optimized for its specific color requirements without interfering with other colors, reducing overall manufacturing complexity.
Solution Approach 2:
The patent creates a universal platform architecture where multiple semiconductor layers can be stacked and integrated using the same general processes. Each layer serves multiple functions: it acts as both the active region for its specific color and as a structural foundation for subsequent layers, simplifying the overall manufacturing approach.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This solution allows for the integration of multiple sub-pixels with different colors on a single substrate, overcoming the limitations of mass transfer and enabling the creation of high-resolution full color micro-LED displays with improved color range and efficiency.
Implementation Method 1
The color conversion layer is formed on the first LED unit to convert light of the first color to light of a third color different from the first color and the second color
Implementation Method 2
The second doping semiconductor layer of the first LED unit is electrically isolated with the second doping semiconductor layer of the second LED unit by an ion-implanted material formed above the first doping semiconductor layer and the MQW layer
Data Source
AI summary
A method for manufacturing an LED structure includes forming a first semiconductor layer on a first substrate; performing a first implantation operation to form a first implanted region and a first non-implanted region in a second doping semiconductor layer of the first semiconductor layer; forming a second semiconductor layer on the first semiconductor layer; performing a second implantation operation to form a second implanted region and a second non-implanted region in a fourth doping semiconductor layer of the second semiconductor layer; performing a first etch operation to remove a portion of the second semiconductor layer and expose at least the first non-implanted region; performing a second etch operation to expose a plurality of contacts of a driving circuit formed in the first substrate; and electrically connecting the first non-implanted region and the second non-implanted region with the plurality of contacts.