Micro LED Transistor Opening Layout for Higher Pixel Density

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Solution Overview

Problem

Current micro light emitting display technologies face challenges in miniaturizing components while maintaining high resolution and efficiency, particularly in the design and manufacturing of micro light emitting display apparatuses, which affects pixel density and production costs.

Innovation Solution

The proposed solution involves a micro light emitting display apparatus with a micro light emitting element, driving and switching transistors, a capacitor, and a specific electrode configuration, including a flat plate type capacitor electrode and a gate electrode that extends into an opening to contact the source or drain region of the switching transistor, along with a metal line that penetrates the drain region of the driving transistor, all integrated on a substrate with precise layering and implantation regions to enhance capacitance and reduce line width.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Measurement precision

If the size of micro light emitting elements is reduced to increase pixel density, then resolution and PPI are improved, but manufacturing precision and alignment accuracy become more difficult to maintain

Engineering Contradiction:
Improvepixel densityVSAvoidalignment accuracy
Core Design Contradiction:
Measurement precisionVSManufacturing precision

Solution Approach 1:

The gate electrode of the driving transistor is nested within the opening structure, extending into the opening to contact the source or drain region of the switching transistor. This nested configuration reduces the overall footprint of the transistor circuit, allowing higher pixel density while maintaining manufacturable dimensions for alignment.

Inventive Principle:
Principle #7Nested doll (Nesting)

Solution Approach 2:

The gate electrode extends vertically into the opening dimension rather than only horizontally, utilizing the third dimension (depth) to reduce the planar footprint. This dimensional transition allows compact layout for high PPI while keeping lateral alignment requirements within manufacturing capabilities.

Inventive Principle:
Principle #17Another dimension (Dimensionality change)

2Measurement precision

If the circuit layout area is minimized to increase PPI, then resolution is improved, but device complexity increases

Engineering Contradiction:
ImprovePPIVSAvoidcircuit layout
Core Design Contradiction:
Measurement precisionVSDevice complexity

Solution Approach 1:

The gate electrode of the driving transistor is merged with the electrode structure that contacts the switching transistor's source or drain region. This consolidation eliminates separate connection structures, reducing layout area and complexity simultaneously while achieving high PPI.

Inventive Principle:
Principle #5Merging (Combining)

Solution Approach 2:

The gate electrode serves multiple functions: it acts as the control electrode for the driving transistor, extends into the opening to establish contact with the switching transistor region, and forms part of the capacitor structure. This multi-functionality reduces the number of separate components needed, simplifying the overall circuit layout.

Inventive Principle:
Principle #6Universality (Multi-functionality)

3Ease of manufacture

If traditional electrode configurations are used, then manufacturing processes are simpler, but pixel density and resolution are limited

Engineering Contradiction:
Improvemanufacturing processVSAvoidpixel density
Core Design Contradiction:
Ease of manufactureVSMeasurement precision

Solution Approach 1:

The opening structure is formed in advance before the gate electrode is deposited, allowing the gate electrode to be directly formed extending into the opening in a single deposition step. This preliminary preparation enables the complex three-dimensional electrode structure to be manufactured using standard sequential deposition processes without requiring additional complex alignment steps.

Inventive Principle:
Principle #10Preliminary action

Data Source

PatentUS20240266387A1Micro light emitting display apparatus and method of manufacturing the same
Publication Date: 2024.08.08 SAMSUNG ELECTRONICS CO LTD
  • US20240266387A1 patent drawing
  • US20240266387A1 patent drawing
  • US20240266387A1 patent drawing

AI summary

A micro light emitting display apparatus and a method of manufacturing the micro light emitting display apparatus are disclosed. The micro light emitting display apparatus includes a micro light emitting element, a driving transistor connected to the micro light emitting element, a switching transistor connected to the driving transistor, and a first opening is provided to expose a source region or a drain region of the switching transistor, and a gate electrode of the driving transistor is provided in the first opening and in contact with the source region or the drain region of the switching transistor.