Micro-LED Display Panel Integration for Precise Pixel Alignment
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Solution Overview
Problem
The manufacturing process of display panels using micro light-emitting diodes is complex due to the need for separate substrate manufacturing and transfer processes, which complicates alignment and limits the production of high-resolution and high-performance display panels.
Innovation Solution
A display panel design that integrates micro light-emitting diodes directly on a substrate, using a two-dimensional semiconductor material layer and ion-doped insulating partitions, which simplifies the manufacturing process and allows for higher resolution and performance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If micro light-emitting diodes are manufactured on a separate substrate and then transferred to the display panel, then the manufacturing process can be divided into separate steps, but the process complexity increases and alignment becomes difficult
Solution Approach 1:
The patent merges the micro light-emitting diode manufacturing process with the display panel manufacturing process by forming both structures simultaneously on the same substrate. The active layer is formed to define the micro light-emitting diode regions, while the semiconductor layer is formed in the same process sequence, eliminating the need for separate substrate manufacturing and transfer operations. This integration directly reduces process complexity while maintaining manufacturing ease.
2Ease of manufacture
If micro light-emitting diodes are manufactured on a separate substrate and then transferred to the display panel, then the manufacturing process can be divided into separate steps, but alignment precision deteriorates
Solution Approach 1:
The patent combines the formation of the active layer (defining micro light-emitting diode positions) and the semiconductor layer into a single integrated process. Both layers are formed on the same substrate in sequence, ensuring precise spatial alignment between the light-emitting structures and the transistor elements. This eliminates alignment errors that would occur during separate substrate transfer operations.
3Measurement precision
If the number of pixels in the display panel increases and the dimension of the micro light-emitting diode decreases, then the resolution improves, but alignment of the micro light-emitting diodes on the display panel becomes more difficult
Solution Approach 1:
The patent forms the active layer first to precisely define the positions and dimensions of the micro light-emitting diodes at the intended resolution. Subsequently, the semiconductor layer is formed in registration with this pre-established active layer pattern. This preliminary action of defining the light-emitting structure positions before forming the transistor elements ensures that even at high pixel densities with reduced dimensions, precise alignment is maintained throughout the manufacturing process.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach simplifies the manufacturing process, enables the production of high-resolution and high-performance display panels, and eliminates the need for complex transfer and bonding processes.
Implementation Method 1
an active layer electrically connected to the first electrode of the micro light-emitting diode, where the active layer includes a quantum well layer surrounded by an ion-doped insulating partition
Data Source
AI summary
A display panel includes a substrate, a gate electrode disposed on the substrate, a two-dimensional semiconductor material layer overlapping the gate electrode, a source electrode and a drain electrode electrically connected to the two-dimensional semiconductor material layer, a first electrode of a micro light-emitting diode electrically connected to the drain electrode, an active layer electrically connected to the first electrode of the micro light-emitting diode, where the active layer includes a quantum well layer surrounded by an ion-doped insulating partition, and a second electrode of the micro light-emitting diode electrically connected to the active layer.


