Micro LED Structure Using Photo-Conversion Particles for Light Efficiency
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
The increasing resolution of color displays requires smaller light-emitting devices, leading to a rapid reduction in efficiency due to the challenges in maintaining light emission intensity with reduced device size.
Innovation Solution
A light-emitting device design incorporating a first semiconductor layer, an active layer, a second semiconductor layer, an insulating film, and photo-conversion particles, where the photo-conversion particles are strategically placed inside and on the semiconductor layers to enhance light intensity through surface plasmon resonance, utilizing metals like gold, silver, and aluminum, and materials such as silicon oxide for the insulating film.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Measurement precision
If the size of the light-emitting device is reduced to increase display resolution, then the display resolution is improved, but the light emission efficiency deteriorates
Solution Approach 1:
The patent introduces photo-conversion particles with specific optical properties at strategic locations within the light-emitting device structure. These particles are positioned in the first semiconductor layer and on the insulating film to locally enhance light intensity through surface plasmon resonance, thereby improving light emission efficiency without increasing the overall device size
Solution Approach 2:
The patent employs composite material structures including metal nanoparticles (gold, silver, copper, or aluminum) embedded in semiconductor layers and insulating films. This composite approach combines the electrical properties of semiconductors with the optical resonance properties of metal particles to achieve enhanced light emission from the active layer without increasing device footprint
2Measurement precision
If the size of the light-emitting device is reduced to increase display resolution, then the display resolution is improved, but the light intensity deteriorates
Solution Approach 1:
Photo-conversion particles are strategically positioned in the first semiconductor layer and on the insulating film to create localized regions of enhanced light intensity. The particles are placed at specific distances (at least 30 nm) from the active layer to optimize surface plasmon resonance effects, thereby amplifying light intensity at critical locations without increasing overall device size
Solution Approach 2:
The patent enhances light intensity by utilizing optical resonance phenomena in the nanoscale dimension. The photo-conversion particles operate at the nanometer scale (1-100 nm diameter) to generate surface plasmon resonance that amplifies light intensity, effectively adding an optical enhancement dimension to the device structure without increasing its physical footprint
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The placement of photo-conversion particles improves light efficiency by amplifying incident light, effectively addressing the efficiency reduction issue in smaller light-emitting devices, thereby enhancing the overall performance of the light-emitting device and display systems.
Implementation Method 1
The first plurality of photo-conversion particles may be configured to amplify an intensity of incident light emitted from the active layer
Data Source
AI summary
A light-emitting device includes a first semiconductor layer having a first conductive type, an active layer provided on the first semiconductor layer, a second semiconductor layer provided on the active layer and having a second conductive type that is electrically opposite to the first conductive type, an insulating film at least partially surrounding the first semiconductor layer, the active layer, and the second semiconductor layer, and a first plurality of photo-conversion particles provided inside the first semiconductor layer.


