Micro LED Manufacturing via Pre-Formed Light Blocking Layers
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Solution Overview
Problem
Existing micro light emitting diode manufacturing processes face challenges with light blocking structure fabrication, leading to damage of the micro light emitting diode structure during transfer and poor development and peeling effects, resulting in reduced structural reliability and low yield.
Innovation Solution
A manufacturing method for micro light emitting diodes that involves forming a connection layer and epitaxial structures on a substrate, with light blocking layers and conversion layers alternately arranged, allowing precise alignment and bonding to a destination substrate, thereby eliminating the need for post-transfer light blocking structures and enhancing transfer accuracy and yield.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If photolithography process steps are used to fabricate light blocking structure after transferring micro light emitting diode structure to temporary substrate, then light blocking structure can be formed, but the micro light emitting diode structure is easily damaged
Solution Approach 1:
The light blocking structure is formed on the substrate before transferring the micro light emitting diode structure to the temporary substrate. This preliminary formation of the light blocking structure eliminates the need for subsequent photolithography process steps after transfer, thereby preventing damage to the already-transferred micro light emitting diode structure while still achieving the desired light blocking function.
2Ease of manufacture
If light blocking structure is fabricated on temporary substrate, then light blocking function is achieved, but development and peeling effects are poor and structural reliability is reduced
Solution Approach 1:
The light blocking structure is formed on the substrate prior to the transfer process, rather than attempting to fabricate it on the temporary substrate after transfer. This approach avoids the poor development and peeling effects associated with post-transfer fabrication, ensuring both functional effectiveness and structural reliability.
3Ease of manufacture
If photolithography process steps are performed after transfer, then light blocking structure can be created, but manufacturing yield is reduced
Solution Approach 1:
By forming the light blocking structure on the substrate before transferring the micro light emitting diode structure to the temporary substrate, the patent eliminates the need for subsequent photolithography process steps. This preliminary action prevents damage to the transferred structure and avoids yield-reducing complications, thereby improving overall manufacturing yield while maintaining the light blocking function.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This method improves manufacturing efficiency and yield while ensuring better reliability of the micro light emitting diode device by maintaining the accuracy and stress relief during transfer and eliminating the need for post-transfer light blocking layers.
Implementation Method 1
Each of the epitaxial structures is bonded to a destination substrate after forming the light blocking layers
Data Source
AI summary
A method for manufacturing a micro light emitting diode device is provided. A connection layer and a plurality of epitaxial structures are formed on a substrate, wherein the epitaxial structures are separated from each other and relative positions therebetween are fixed via the connection layer. A first pad is formed on each of the epitaxial structures. A plurality of light blocking layers are formed between the epitaxial structures, wherein the light blocking layers and the epitaxial structures are alternately arranged. Each of the epitaxial structures is bonded to a destination substrate after forming the light blocking layers. The substrate is removed to expose the connection layer. A light conversion layer is formed corresponding to each of the epitaxial structures, wherein a width of the light conversion layer is greater than or equal to a distance between any two of the light blocking layers.