Micro LED Reflection Layer Layout for Light Loss Reduction
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Solution Overview
Problem
Micro light-emitting devices face significant light loss due to film layers or elements with high light absorption ratios, leading to reduced efficiency.
Innovation Solution
A micro light-emitting device design incorporating a light reflection layer with an oxidized area and a non-oxidized area, where the oxidized area has higher reflectance, is inserted between the light-emitting layer and film layers or elements with high absorption ratios, reflecting light before it reaches these areas to minimize absorption and enhance efficiency.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Loss of energy
If light passes through film layers or elements in micro light-emitting devices, then the device structure is complete and functional, but light is absorbed by these layers causing light loss and reduced light-emitting efficiency
Solution Approach 1:
A light reflection layer is introduced as an intermediary component between the light-emitting layer and the first type electrode. This reflection layer includes an oxidized area with high reflectance that redirects light away from absorbing film layers, while a non-oxidized area with lower reflectance allows controlled light transmission. This mediator reduces light loss without requiring complete structural redesign of the device.
Solution Approach 2:
The light reflection layer is designed with spatially varying properties: an oxidized area with high reflectance positioned where light should be reflected, and a non-oxidized area with lower reflectance positioned to allow light transmission. This local differentiation of optical properties enables precise control over light paths, reducing absorption by specific film layers while maintaining device functionality.
2Loss of energy
If a light reflection layer is added to reduce light loss, then light-emitting efficiency is improved, but the device structure becomes more complex
Solution Approach 1:
The light reflection layer is merged with existing device components rather than being added as a completely separate element. The reflection layer is positioned between the light-emitting layer and the first type electrode, utilizing the existing structural framework. This merging approach reduces light loss while minimizing the increase in overall structural complexity.
3Loss of energy
If the oxidized area of the light reflection layer is positioned to reflect light, then light loss is reduced, but current flow control becomes more challenging
Solution Approach 1:
The light reflection layer is designed with spatially varying properties: an oxidized area with high reflectance positioned where light should be reflected, and a non-oxidized area with lower reflectance positioned to allow light transmission. This local differentiation of optical properties enables precise control over light paths, reducing absorption by specific film layers while maintaining device functionality.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This design effectively reduces light loss and improves light-emitting efficiency by reflecting light emitted by the light-emitting layer before it is absorbed by the film layers or elements, while also controlling current flow and reducing surface recombination and heat generation.
Implementation Method 1
The light reflection layer includes an oxidized area and a non-oxidized area. A reflectance of the oxidized area is greater than a reflectance of the non-oxidized area.
Data Source
AI summary
A micro light-emitting device, including a first type semiconductor layer, a light-emitting layer, a second type semiconductor layer, a first type electrode, a second type electrode, and a light reflection layer, is provided. The light-emitting layer is arranged on the first type semiconductor layer. The second type semiconductor layer is arranged on the light-emitting layer. The first type electrode and the second type electrode are both arranged on the second type semiconductor layer. The light reflection layer is arranged between the light-emitting layer and the first type electrode. The light reflection layer includes an oxidized area and a non-oxidized area. A reflectance of the oxidized area is greater than a reflectance of the non-oxidized area. An orthographic projection of a part of the oxidized area on the first type semiconductor layer and an orthographic projection of the first type electrode on the first type semiconductor layer at least partially overlap.