Micro LED Chip Side Electrode Design
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Solution Overview
Problem
The manufacturing of micro light-emitting diode (micro-LED) chips is challenging due to the need for precise alignment and hole digging, which reduces the light emitting area and increases production costs, as the contact holes diminish the light emitting area and require complex processes.
Innovation Solution
A micro light-emitting diode chip design featuring an epitaxial structure with a first and second electrode, where the second electrode is connected to the side surface of the epitaxial structure, eliminating the need for contact holes through the light emitting layer, and an insulating layer electrically isolates the electrodes, allowing for a larger light emitting area and simplified manufacturing.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If contact holes are manufactured to connect electrodes through the light emitting layer, then electrical connection is achieved, but the light emitting area is reduced and manufacturing complexity increases
Solution Approach 1:
The patent transitions from a planar contact structure to a three-dimensional structure by forming side surfaces on the semiconductor layer and placing contact holes laterally. This dimensional change allows electrical connection without compromising the top light emitting area, as contacts are routed through the sides rather than penetrating the light emitting layer from above.
Solution Approach 2:
The contact structure is segmented into multiple components: a first contact hole forming region on the top surface, side surfaces extending laterally, and a second contact hole forming region on the side. This segmentation allows electrical connection to be achieved through multiple pathways without requiring a single large contact hole that would block light emission.
2Reliability
If precise alignment and hole digging processes are used to manufacture contact holes, then electrical connection is achieved, but manufacturing cost and complexity increase
Solution Approach 1:
The patent performs preliminary actions by forming the side surfaces and first contact holes before finalizing the second contact holes. This preliminary structuring creates a framework that guides subsequent manufacturing steps, reducing the precision requirements for final alignment and simplifying the overall manufacturing process.
Solution Approach 2:
The side surfaces act as an intermediary structure between the top surface contact holes and the bottom electrode. This intermediate formation provides a bridge that facilitates electrical connection without requiring direct vertical alignment through the entire light emitting layer, thereby reducing manufacturing complexity.
3Reliability
If contact holes penetrate through the light emitting layer, then electrode connection is achieved, but the number of manufacturing steps increases
Solution Approach 1:
By introducing lateral side surfaces as an intermediate structure, the patent creates a three-dimensional contact pathway that avoids the need for deep vertical penetration through the light emitting layer. This dimensional approach reduces the number of sequential manufacturing steps required to achieve electrode connection.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This design simplifies the manufacturing process, reduces alignment errors, and increases the light emitting area ratio, making the micro-LED chip easier to produce and more efficient.
Implementation Method 1
a light emitting layer (130), and the light emitting layer is located between the first type doped semiconductor layer (110) and the second type doped semiconductor layer (120)
Data Source
AI summary
A micro light-emitting diode chip includes an epitaxial structure, a first electrode, and a second electrode. The epitaxial structure includes a first type doped semiconductor layer, a light emitting layer, and a second type doped semiconductor layer, and the epitaxial structure further includes a first surface, a side surface and a second surface opposite to the first surface. The side surface of the epitaxial structure connects to an outer edge of the first surface and an outer edge of the second surface. The first electrode is disposed on the first surface, and is electrically connected to the first type doped semiconductor layer and contacts the first type doped semiconductor layer on a portion of the first surface. The second electrode is disposed on and surrounds the side surface, and electrically connected to the second type doped semiconductor layer, and directly contacts the second type doped semiconductor layer on a portion of the side surface. A length of a diagonal of the micro light-emitting diode chip is greater than 1 micrometer and is less than or equal to 140 micrometers, and a thickness of the micro light-emitting diode chip is great than 1 micrometer and is less than 10 micrometers.